Growth of a novel InAs-GaAs strained layer superlattice on InP

Tamargo, M. C.; Hull, R.; Greene, L. H.; Hayes, J. R.; Cho, A. Y.
March 1985
Applied Physics Letters;3/15/1985, Vol. 46 Issue 6, p569
Academic Journal
Strained layer superlattice structures with ultrathin, alternating InAs and GaAs layers have been grown on buffer layers lattice matched to InP. Low angle x-ray scattering and transmission electron microscopy studies were used to characterize the layers.


Related Articles

  • Structural and optical properties of high quality InAs/GaAs short-period superlattices grown by migration-enhanced epitaxy. Gérard, J. M.; Marzin, J. Y.; Jusserand, B.; Glas, F.; Primot, J. // Applied Physics Letters;1/2/1989, Vol. 54 Issue 1, p30 

    InAs/GaAs highly strained short-period superlattices have been grown by migration-enhanced epitaxy on InP(001) substrates. Such samples exhibit clearly improved structural and optical properties. X-ray diffraction, scanning transmission electron microscopy, photoluminescence, and Raman...

  • Growth by molecular beam epitaxy and characterization of InAs/GaAs strained-layer superlattices. Goldstein, L.; Glas, F.; Marzin, J. Y.; Charasse, M. N.; Le Roux, G. // Applied Physics Letters;11/15/1985, Vol. 47 Issue 10, p1099 

    InAs/GaAs superlattices with ultra-thin InAs (few monolayer) were grown on GaAs substrates. Nucleation of InAs occurs in a two-dimensional or a three-dimensional way depending on the growth conditions. The physical properties: x ray, transmission electron microscopy, and photoluminescence were...

  • GaAsN/InAsN superlattice based multijunction thermophotovoltaic devices. Bhusal, L.; Freundlich, A. // Journal of Applied Physics;Oct2007, Vol. 102 Issue 7, p074907 

    Quantitative modeling of the performance of a single and multijunction p(InGaAs)-i(superlattice)-n(InGaAs) device lattice matched to InP utilizing a GaAsN/InAsN superlattice structure is performed, and the results are compared quantitatively with the bulk metamorphic InGaAs counterpart devices....

  • Unipolar infrared detectors based on InGaAs/InAsSb ternary superlattices. Ariyawansa, Gamini; Reyner, Charles J.; Duran, Joshua M.; Reding, Joshua D.; Scheihing, John E.; Steenbergen, Elizabeth H. // Applied Physics Letters;7/11/2016, Vol. 109 Issue 2, p021112-1 

    Growth and characteristics of mid-wave infrared (MWIR) InGaAs/InAsSb strained layer superlattice (SLS) detectors are reported. InGaAs/InAsSb SLSs, identified as ternary SLSs, not only provide an extra degree of freedom for superlattice strain compensation but also show enhanced absorption...

  • Characterization of excitonic features in self-assembled InAs/GaAs quantum dot superlattice structures via surface photovoltage spectroscopy. Chan, C. H.; Lee, C. H.; Huang, Y. S.; Wang, J. S.; Lin, H. H. // Journal of Applied Physics;5/15/2007, Vol. 101 Issue 10, p103102 

    This work systematically investigates the influence of InAs growth conditions and superlattice parameters on the optical properties of InAs/GaAs quantum dot (QD) superlattice structures grown by molecular beam epitaxy. Using surface photovoltage spectroscopy, one directly obtains the absorption...

  • Electroabsorption effects in InxGa1-xAs/GaAs strained-layer superlattices. Niki, S.; Kellner, A. L.; Lin, S. C.; Cheng, A.; Williams, A. R.; Chang, W. S. C.; Wieder, H. H. // Applied Physics Letters;1/29/90, Vol. 56 Issue 5, p475 

    Electroabsorption of strained-layer Inx Ga1-x As/GaAs superlattice structures grown by molecular beam epitaxy on GaAs substrates was experimentally investigated. Its spectral characteristics were found to be similar to those of Franz–Keldysh electroabsorption of bulk semiconductor...

  • GaAsSb/GaAsN short-period superlattices as a capping layer for improved InAs quantum dot-based optoelectronics. Utrilla, A. D.; Reyes, D. F.; Ulloa, J. M.; Gonzalez, D.; Ben, T.; Guzman, A.; Hierro, A. // Applied Physics Letters;7/28/2014, Vol. 105 Issue 4, p1 

    The application of a GaAsSb/GaAsN short-period superlattice capping layer (CL) on InAs/GaAs quantum dots (QDs) is shown to be an option for providing improved luminescence properties to this system. Separating both GaAsSb and GaAsN ternaries during the growth in 2 monolayer-thick phases solves...

  • Growth and transport properties of InAs epilayers on GaAs. Kalem, Seref; Chyi, Jen-Inn; Morkoç, Hadis; Bean, Ross; Zanio, Ken // Applied Physics Letters;10/24/1988, Vol. 53 Issue 17, p1647 

    A series of InAs epitaxial layers with thicknesses ranging from 0.5 up to 6.2 μm was grown on (100) oriented semi-insulating GaAs substrates by molecular beam epitaxy. The transport properties of the layers have been investigated by Hall effect measurements down to 10 K. The properties of the...

  • Pulsed laser atom probe analysis of GaAs and InAs. Cerezo, A.; Grovenor, C. R. M.; Smith, G. D. W. // Applied Physics Letters;3/15/1985, Vol. 46 Issue 6, p567 

    A pulsed laser atom probe has been used to obtain the first stoichiometrically correct analysis of GaAs and InAs. These results are presented, together with a comparison of results obtained from conventional and pulsed laser atom probes.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics