TITLE

Growth of a novel InAs-GaAs strained layer superlattice on InP

AUTHOR(S)
Tamargo, M. C.; Hull, R.; Greene, L. H.; Hayes, J. R.; Cho, A. Y.
PUB. DATE
March 1985
SOURCE
Applied Physics Letters;3/15/1985, Vol. 46 Issue 6, p569
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Strained layer superlattice structures with ultrathin, alternating InAs and GaAs layers have been grown on buffer layers lattice matched to InP. Low angle x-ray scattering and transmission electron microscopy studies were used to characterize the layers.
ACCESSION #
9817239

 

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