TITLE

Breakdown in silicon oxides (II)—correlation with Fe precipitates

AUTHOR(S)
Honda, Kouichirou; Ohsawa, Akira; Toyokura, Nobuo
PUB. DATE
March 1985
SOURCE
Applied Physics Letters;3/15/1985, Vol. 46 Issue 6, p582
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Thin silicon oxides of metal-oxide-semiconductor (MOS) capacitors were studied by transmission electron microscopy. The MOS capacitors were fabricated on silicon wafers which had been intentionally contaminated by Fe+ ion implantation. It was found that Fe precipitates crossing the SiO2/Si interface penetrated into the silicon oxide from the silicon substrate. They reduced the breakdown strength by inducing singularity points in the silicon oxide.
ACCESSION #
9817237

 

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