High efficiency n-Cd(Se,Te)/S=photoelectrochemical cell resulting from solution chemistry control

Licht, Stuart; Tenne, Reshef; Dagan, Geulah; Hodes, Gary; Manassen, Joost; Cahen, David; Triboulet, Robert; Rioux, Jacques; Levy-Clement, Claude
March 1985
Applied Physics Letters;3/15/1985, Vol. 46 Issue 6, p608
Academic Journal
High efficiency (12.7%) CdSe0.68Te0.32/cesium polysulfide photoelectrochemical cells are demonstrated in this work. Crystals of the ternary alloy Cd(Se, Te) of type n type were synthesized by the traveling heater method. The nature of the polysulfide electrolyte, based on Cs polysulfide without excess hydroxide and containing small amounts of copper ions, is shown to be of particular importance in determining the cell efficiency. Reasonable output stability of the cell was obtained under accelerated tests.


Related Articles

  • n-GaAs BAND-EDGE REPOSITIONING BY MODIFICATION WITH METALLOPORPHYRIN/POLYSILOXANE MATRICES. Hilal, Hikmat S.; Masoud, Moayyad; Shakhshir, Samar; Jisrawi, Najeh // Active & Passive Electronic Components;Jan2003, Vol. 26 Issue 1, p11 

    Tetra(-4-pyridyl)porphyrinatomanganese(III)sulfate, MnP, (in the forms of Mn III and Mn II mixture), was embedded into a polysiloxane polymer matrix and attached to the surfaces of n-GaAs wafers. The n-GaAs/polymer/MnP system was annealed under nitrogen and used for photoelectrochemical study in...

  • Enhanced photoelectrochemical efficiency of titania photoanodes.  // Industrial Ceramics;Apr2009, Vol. 29 Issue 1, p61 

    The article reports on the significance of using photoelectrochemical electrolysis as a direct method for solar-to-hydrogen conversion.

  • Electron transmission through layers of H2O and Xe in the ultrahigh vacuum photoreduction of CH3Cl on Ni(111). Gilton, Terry L.; Dehnbostel, Claus P.; Cowin, James P. // Journal of Chemical Physics;8/1/1989, Vol. 91 Issue 3, p1937 

    The photoreduction of CH3Cl was used to detect the transmission of electrons through layers of H2O and Xe on Ni(111) under ultrahigh vacuum (UHV) conditions. At a laser wavelength of 248 nm with H2O spacers, the electron intensity exhibited a nearly exponential decay to zero signal with the 1/e...

  • In Situ Photoluminescence Studies of Silicon Surfaces During Photoelectrochemical Etching Processes. Liu, Feng-Ming; Ren, Bin; Yan, Jia-Wei; Mao, Bing-Wei; Tian, Zhong-Qun // Surface Review & Letters;Jun-Aug2001, Vol. 8 Issue 3/4, p327 

    The photoluminescence (PL) from silicon surfaces during photoelectrochemical etching processes was monitored in situ by using a confocal microprobe spectrometer. The etching time, laser power, polarization potential and the resistance of silicon were found to remarkably influence the formation...

  • Backside-illuminated photoelectrochemical etching for the fabrication of deeply undercut GaN structures. Stonas, A. R.; Stonas, A.R.; Kozodoy, P.; Marchand, H.; Fini, P.; DenBaars, S. P.; DenBaars, S.P.; Mishra, U. K.; Mishra, U.K.; Hu, E. L.; Hu, E.L. // Applied Physics Letters;10/16/2000, Vol. 77 Issue 16 

    A photoelectrochemical (PEC) wet-etching technique (backside-illuminated PEC) is described that utilizes the dopant or band-gap selectivity of PEC etching to fabricate deeply undercut structures. Lateral etch rates exceeding 5 μm/min have been observed, producing cantilevers in excess of...

  • Passivation of recombination centers in n-WSe2 yields high efficiency (>14%) photoelectrochemical cell. Tenne, R.; Wold, A. // Applied Physics Letters;10/1/1985, Vol. 47 Issue 7, p707 

    It is shown that careful photoetching of n-WSe2 leads to a large improvement in its photoresponse. Conversion efficiencies in excess of 14% were obtained in polyiodide solution under simulated solar light. A significant red shift in the photocurrent spectrum is observed after photoetching as...

  • Photoelectrochemical conversion in a WO[sub 3] coated p-Si photoelectrode: Effect of annealing temperature. Yoon, Ki Hyun; Shin, Choul Woo; Kang, Dong Heon // Journal of Applied Physics;5/15/1997, Vol. 81 Issue 10, p7024 

    The photoelectrochemical properties of a p-type silicon (100) electrode coated with tungsten oxide thin film were investigated as a function of annealing temperature. The variation in the annealing temperature affected the photocurrent of a WO[sub 3]/p-Si electrode. A maximum photocurrent was...

  • Dependence of photoelectric behavior of TiO2 electrodes on processing variables. Yoon, Ki Hyun; Park, Kyung Bong // Journal of Applied Physics;8/15/1988, Vol. 64 Issue 4, p2189 

    Presents information on a study which investigated the photoelectrochemical conversion behavior of titanium dioxide (TiO[sub2]) ceramic electrodes as a function of electrode processing variables. Photoelectrochemical measurement carried out; Conversion of TiO[sub2] ceramic specimens with high...

  • Energy levels of HCN[sup +] and DCN[sup +] in the vibronically coupled X [sup 2]Π and A [sup 2]Σ[sup +] states. Tarroni, Riccardo; Mitrushenkov, Alexander; Palmieri, Paolo; Carter, Stuart // Journal of Chemical Physics;12/22/2001, Vol. 115 Issue 24, p11200 

    The X²Π and A ²Σ[sup +] electronic states of HCN[sup +] have been studied using a previously developed method [Carter et al., Mol. Phys. 98, 1967 (2000)] suitable for triatomic molecules showing three-state (Renner-Teller+vibronic) interactions. Ab initio three-dimensional diabatic...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics