Broadband Y-branch electro-optic GaAs waveguide interferometer for 1.3 μm

Buchmann, P.; Kaufmann, H.; Melchior, H.; Guekos, G.
March 1985
Applied Physics Letters;3/1/1985, Vol. 46 Issue 5, p462
Academic Journal
Electro-optic Mach–Zehnder rib waveguide interferometers with low loss Y branches and Schottky barrier electrodes have been fabricated in n-/n+-GaAs by reactive ion etching. With antireflection coating and optimized Y branches device losses of the interferometers at 1.3 μm were as low as 4 dB. In a push-pull configuration drive voltages of only 13 V suffice to attain a modulation depth of 12.7 dB. The optical signal bandwidth of these interferometers was measured to exceed 4.5 GHz.


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