A high-sensitivity stressed photoconductor for observing luminescence from germanium

Perez, J. M.
March 1985
Applied Physics Letters;3/1/1985, Vol. 46 Issue 5, p492
Academic Journal
We describe a detector for observing luminescence from germanium with a noise equivalent power (NEP)=2×10-14 W/(Hz)1/2 at 0.71 eV. The detector consists of a high-purity Ge photoconductor at 2 K which is stressed 85 kg/mm2 in the <111> direction to reduce the band gap to 0.68 eV. At this band gap, the detector efficiently absorbs luminescence ≥0.70 eV but is insensitive to room-temperature blackbody radiation which degrades commercial detectors with smaller band gaps. The NEP limit set by shot noise is 1.7×10-15 W/(Hz)1/2 at 0.71 eV. The current at low light level is thought to be space charge limited current.


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