Properties of (Ge2)x(GaAs)1-x alloys grown by molecular beam epitaxy

Banerjee, Indrajit; Chung, Don W.; Kroemer, Herbert
March 1985
Applied Physics Letters;3/1/1985, Vol. 46 Issue 5, p494
Academic Journal
Single-crystalline (Ge2)x(GaAs)1-x alloys have been grown by molecular beam epitaxy on GaAs (100) substrates at substrate temperatures of 550 and 430 °C. The structure of these alloys has been studied using transmission electron microscopy. We observe that growths done at 550 °C show a compositional phase separation, within a structurally single-crystalline lattice, into Ge-rich and GaAs-rich domains whose sizes are of the order of 100 Å. Growths at 430 °C appear to be both single phase and single crystalline. Room-temperature Hall measurements on the single-phase alloys show them to be n type.


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