Combination of open-tube vapor and liquid phase epitaxy of Hg1-xCdxTe

Sand, E.; Levy, D.; Nemirovsky, Y.
March 1985
Applied Physics Letters;3/1/1985, Vol. 46 Issue 5, p501
Academic Journal
A novel growth process of Hg1-xCdxTe epitaxial layers by a combination of open-tube vapor phase epitaxy (VPE) and liquid phase epitaxy (LPE) techniques is described. Device-quality layers with improved morphology, reduced misfit dislocations, and a reflecting boundary with very low surface recombination velocity at the substrate interface are obtained by this method. High performance photodiodes operating at both 77 and 193 K with cut-off wavelengths of 6.2 and 5.3 μm respectively were fabricated. The epitaxial layers obtained on bulk CdTe by the combination of VPE and LPE are in some respects better than layers grown by LPE on alternate substrates such as CdZnTe. off


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