Silicon interstitial generation by argon implantation

Bronner, G. B.; Plummer, J. D.
March 1985
Applied Physics Letters;3/1/1985, Vol. 46 Issue 5, p510
Academic Journal
In this letter we show that damaged layers in silicon created by argon implantation act as a source of silicon interstitials. This effect is shown to cause orders of magnitude increase in the diffusion coefficient of phosphorus at temperatures less than 800 °C. This creation of interstitials is shown to be long lasting. The value of this is discussed in understanding the role of point defects on dopant diffusion.


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