TITLE

Silicon interstitial generation by argon implantation

AUTHOR(S)
Bronner, G. B.; Plummer, J. D.
PUB. DATE
March 1985
SOURCE
Applied Physics Letters;3/1/1985, Vol. 46 Issue 5, p510
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In this letter we show that damaged layers in silicon created by argon implantation act as a source of silicon interstitials. This effect is shown to cause orders of magnitude increase in the diffusion coefficient of phosphorus at temperatures less than 800 °C. This creation of interstitials is shown to be long lasting. The value of this is discussed in understanding the role of point defects on dopant diffusion.
ACCESSION #
9817203

 

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