Recombination lifetime of carriers in GaAs-GaAlAs quantum wells near room temperature

Arakawa, Yasuhiko; Sakaki, Hiroyuki; Nishioka, Masao; Yoshino, Junji; Kamiya, Takeshi
March 1985
Applied Physics Letters;3/1/1985, Vol. 46 Issue 5, p519
Academic Journal
The lifetime τ of carriers in undoped GaAs-GaAlAs quantum well structures was studied at room temperature by using the photoluminescence phase shift method. We have found that τ is inversely proportional to the carrier concentration under the excitation levels of 1016–1018 cm-3. The comparison of these results with both the theory of band-to-band recombination and the measured dependence of τ on the carrier concentration at 77 K suggests that the carrier recombination near room temperature is dominated by this band-to-band recombination process. We also discussed the dependence of τ on the quantum well thickness.


Related Articles

  • Intersubband infrared absorption in a GaAs/Al0.3Ga0.7As quantum well structure. Manasreh, M. O.; Szmulowicz, F.; Fischer, D. W.; Evans, K. R.; Stutz, C. E. // Applied Physics Letters;10/22/1990, Vol. 57 Issue 17, p1790 

    The linewidth, total integrated area, and peak position (ν0) of the intersubband transition (IT) in a GaAs/Al0.3Ga0.7As multiple quantum well, with doping in the barrier, are studied as a function of temperature using the infrared absorption technique. From the temperature dependence of the...

  • Dynamics of Anti-Stokes Photoluminescence by Phonon Heating under Excitation Resonant to Exciton States of GaAs Quantum Well Growth Islands. Fujiwara, Kenzo // AIP Conference Proceedings;12/22/2011, Vol. 1399 Issue 1, p501 

    The exciton dynamics of anti-Stokes photoluminescence (PL) have been investigated by measuring transient PL spectra under ps pulsed photoexcitation resonant to the ground heavy-hole exciton states in a GaAs single quantum well with growth islands (GIs) as a function of lattice temperature....

  • Giant polarized photoluminescence and photoconductivity in type-II GaAs/GaAsSb multiple quantum wells induced by interface chemical bonds. Chiu, Y. S.; Ya, M. H.; Su, W. S.; Chen, T. T.; Chen, Y. F.; Lin, H. H. // Applied Physics Letters;12/23/2002, Vol. 81 Issue 26, p4943 

    Anisotropic property of type-II GaAs/GaAsSb heterostructures was studied by photoluminescence (PL) and photoconductivity (PC). It was found that the PL and PC spectra exhibit a strong in-plane polarization with respect to 〈011〉 axis with polarization degrees up to 40%. We showed...

  • Photoluminescence of Cu[sub Ga]Te[sub As] and Cu[sub Ga]Sn[sub Ga] Complexes in n-GaAs under Resonance Polarized Excitation. Averkiev, N. S.; Gutkin, A. A.; Sedov, V. E. // Semiconductors;Feb2001, Vol. 35 Issue 2, p170 

    Photoluminescence (PL) of n-type GaAs:Te:Cu and GaAs:Sn:Cu with an electron density of about 10[sup 18] cm[sup -3] was studied at 77 K. A broad band with a peak at the photon energy near 1.30 eV (GaAs:Te:Cu) or 1.27 eV (GaAs:Sn:Cu) was dominant in the PL spectrum under interband excitation. This...

  • Low-Temperature Photoluminescence and X-ray Diffractometry Study of In[sub x]Ga[sub 1 – ][sub x]As Quantum Wells. Evstigneev, S. V.; Imamov, R. M.; Lomov, A. A.; Sadof’ev, Yu. G.; Khabarov, Yu. V.; Chuev, M. A.; Shipitsin, D. S. // Semiconductors;Jun2000, Vol. 34 Issue 6, p693 

    The structures grown by molecular-beam epitaxy with In[sub x]Ga[sub 1-x]As quantum wells (QWs) in GaAs were studied by X-ray diffractometry and low-temperature photoluminescence techniques. The inhomogeneity of the QW composition along the growth direction was established. Energy positions of...

  • Magnetic excitons in near-surface quantum wells: experiment and theory. Kulakovskiı, V. D.; Kulik, L. V.; Yablonskiı, A. L.; Dzyubenko, A. B.; Gippius, N. A.; Tikhodeev, S. G.; Forchel, A. // Physics of the Solid State;May98, Vol. 40 Issue 5, p740 

    We have measured the photoluminescence spectra and photoluminescence excitation spectra of magnetic excitons in InGaAs/GaAs near-surface quantum wells in a magnetic field. We have quantitatively investigated the effect of dielectric enhancement of excitons in quantum wells brought about by...

  • Photoluminescence and structure properties of GaAs/ZnSe quantum wells. Zhang, S.; Kobayashi, N. // Applied Physics Letters;2/17/1992, Vol. 60 Issue 7, p883 

    Examines the quantum size effect in photoluminescence (PL) of zinc selenide (ZnSe)/gallium arsenide (GaAs)/ZnSe quantum wells by improving the quality of GaAs well layer on ZnSe barrier. Implementation of migration-enhanced epitaxy of GaAs well layer; Changes to higher energies of PL spectra;...

  • Photoluminescence study of interdiffusion in In[sub 0.53]Ga[sub 0.47]As/InP surface quantum wells. Oshinowo, J.; Forchel, A.; Grutzmacher, D.; Stollenwerk, M.; Heuken, M.; Heime, K. // Applied Physics Letters;5/25/1992, Vol. 60 Issue 21, p2660 

    Investigates the thermal stability and interdiffusion of InGaAs/InP surface quantum wells. Achievement of well-defined photoluminescence emission spectra; Observation of strong emission energy shift; Estimation of interdiffusion coefficient.

  • Molecular beam epitaxial growth and optical characterization of GaAs/Al[sub x]Ga[sub 1-x]As.... Garcia, B.J.; Fontaine, C. // Applied Physics Letters;11/8/1993, Vol. 63 Issue 19, p2691 

    Examines the molecular beam epitaxial growth conditions of gallium arsenide/aluminum gallium arsenide quantum wells on nominally oriented gallium arsenide substrates. Presentation of photoluminescence measurement; Significance of growth interruption for high temperatures; Discussion on the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics