TITLE

Recombination lifetime of carriers in GaAs-GaAlAs quantum wells near room temperature

AUTHOR(S)
Arakawa, Yasuhiko; Sakaki, Hiroyuki; Nishioka, Masao; Yoshino, Junji; Kamiya, Takeshi
PUB. DATE
March 1985
SOURCE
Applied Physics Letters;3/1/1985, Vol. 46 Issue 5, p519
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The lifetime τ of carriers in undoped GaAs-GaAlAs quantum well structures was studied at room temperature by using the photoluminescence phase shift method. We have found that τ is inversely proportional to the carrier concentration under the excitation levels of 1016–1018 cm-3. The comparison of these results with both the theory of band-to-band recombination and the measured dependence of τ on the carrier concentration at 77 K suggests that the carrier recombination near room temperature is dominated by this band-to-band recombination process. We also discussed the dependence of τ on the quantum well thickness.
ACCESSION #
9817197

 

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