Growth of ultrapure and Si-doped InP by low pressure metalorganic chemical vapor deposition

Di Forte-Poisson, M. A.; Brylinski, C.; Duchemin, J. P.
March 1985
Applied Physics Letters;3/1/1985, Vol. 46 Issue 5, p476
Academic Journal
Low pressure metalorganic chemical vapor epitaxial growth and characterization of high purity and Si-doped indium phosphide on semi-insulating (100) InP:Fe substrate are presented in this letter. Electrical characteristics of the layers were determined from Hall measurements. Hall mobilities as high as 145 000 cm2 V-1 s-1 at 77 K have been achieved on high purity layers with net donnor density ND-NA[bar_over_tilde:_approx._equal_to]2×1014 cm-3. High resolution photoluminescence measurements were performed with the as-grown layers at temperatures down to 1.7 K. Carrier concentration and the resulting mobility of intentionally Si-doped low pressure metalorganic chemical vapor deposition grown InP layers were also studied.


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