TITLE

Diffusion and precipitation in amorphous Si

AUTHOR(S)
Elliman, R. G.; Gibson, J. M.; Jacobson, D. C.; Poate, J. M.; Williams, J. S.
PUB. DATE
March 1985
SOURCE
Applied Physics Letters;3/1/1985, Vol. 46 Issue 5, p478
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The diffusion and precipitation of several ion implanted impurities in amorphous Si have been observed at temperatures of 300–600 °C. Typical slow diffusers in crystalline Si, such as As, In, Sb, and Bi, show little or no diffusion at low concentrations. At high concentrations (>1 at. %), they diffuse rapidly with D>=10-15 cm2/s in the temperature range 500–600 °C. Typical fast diffusers in crystalline Si, such as Cu and Au, diffuse in amorphous Si with D>10-12 cm2/s at 400–600 °C. Precipitation has been observed for both the fast and slow diffusers in amorphous Si.
ACCESSION #
9817183

 

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