Studies of Ag photodoping in GexSe1-x glass using microlithography techniques

Leung, W.; Cheung, N. W.; Neureuther, A. R.
March 1985
Applied Physics Letters;3/1/1985, Vol. 46 Issue 5, p481
Academic Journal
Using microlithographic techniques to define the Ag sensitized area, the lateral profile of Ag diffusion in GexSe1-x (x≊0.1) glass is made directly visible with an optical microscope. Experimental measurements have verified that Ag photodoping in Ge0.1Se0.9 glass obeys Fick’s diffusion law with a constant diffusivity. Light absorption in the Ag2Se region has little effect on Ag photodoping. Ag photodoping is caused mainly by light absorption in the Ge0.1Se0.9 near the boundary between the Ag-containing and the non-Ag-doped region. Light absorption in Ge0.1Se0.9 glass has a long range effect which causes Ag photodoping to occur even when light irradiation is away (up to 3 μm) from Ag-containing region.


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