InP single crystal film fabrication on a glass substrate

Iida, Shosan
March 1985
Applied Physics Letters;3/1/1985, Vol. 46 Issue 5, p496
Academic Journal
A new method for fabricating an InP single crystal film on a glass substrate is given. It uses a molecular beam deposition technique in combination with other techniques such as recrystallization and liquid phase epitaxy techniques. By this method an InP layer covered with an In layer is fabricated on a glass substrate and treated in situ. After the treatment, it is confirmed that an InP single crystal film has been fabricated on the glass substrate through crystallographical examinations by means of an electron probe x-ray microanalyzer, x-ray Laue photography, and x-ray diffractometer using the Bond technique for single crystals.


Related Articles

  • Observation of pressure-induced direct-to-indirect band gap transition in InP nanocrystals. Lee, Chieh-Ju; Mizel, Ari; Banin, Uri; Cohen, Marvin L.; Alivisatos, A. Paul // Journal of Chemical Physics;8/1/2000, Vol. 113 Issue 5 

    We investigate the quantum size effects in the pressure-induced direct-to-indirect band gap transition in InP nanocrystals. Hydrostatic pressures of up to 13 GPa are applied to two different sizes of InP nanocrystal samples in a diamond anvil cell. The band gap pressure dependence and the nature...

  • Self-organized growth of single crystals of nanopores. Langa, S.; Tiginyanu, I. M.; Carstensen, J.; Christophersen, M.; Föll, H. // Applied Physics Letters;1/13/2003, Vol. 82 Issue 2, p278 

    Self-organized single crystalline two-dimensional hexagonal arrays of pores in InP semiconductor compound are reported. We show that the self-arrangement of pores can be obtained on n-type substrates with (100) and (111) orientations. The long-range order in pore distribution evidenced in...

  • Photoluminescence study of residual shallow acceptors in liquid-encapsulated Czochralski-grown InP. Kubota, Eishi; Katsui, Akinori; Sugii, Kiyomasa // Journal of Applied Physics;6/1/1986, Vol. 59 Issue 11, p3841 

    Presents a photoluminescence (PL) study of residual shallow acceptors in liquid-encapsulated Czochralski (LEC)-grown indium phosphide. Reason for the utilization of PL for identification of residual impurities; Elucidation of the residual shallow acceptors throughout the LEC grown crystals and...

  • Investigation of Structural and Optical Properties of InP Thin Films Developed by Using Spraying Method. Aksoy, Funda; Kayali, Refik; Öztaş, Mustafa; Bedir, Metin // AIP Conference Proceedings;2007, Vol. 899 Issue 1, p231 

    Structural and optical properties of InP films developed with the solutions prepared with InCl3 and Cl2HPO4 salts having different rates by using spraying method have been investigated using the data obtained from UV spectrometer and XRD (x-ray difractometer). Band gap energy values of all...

  • High-purity epitaxial indium phosphide grown by the hydride technique. McCollum, M. J.; Kim, M. H.; Bose, S. S.; Lee, B.; Stillman, G. E. // Applied Physics Letters;11/7/1988, Vol. 53 Issue 19, p1868 

    Indium phosphide layers with electron mobilities at liquid-nitrogen temperature of 91 000–125 000 cm2 /V s and carrier concentrations of 3–6×1014 cm-3 have been routinely grown by hydride vapor phase epitaxy. This 77 K mobility is significantly higher than the best previously...

  • Fluctuation Mechanism of Formation of Discontinuous Tracks by Fast Ions in Solids. Komarov, F. F.; Belyı, V. A. // Journal of Experimental & Theoretical Physics;Aug2002, Vol. 95 Issue 2, p316 

    The effect of one-electron and many-electron charge-exchange processes involving fast heavy ions on the formation of tracks in crystals is considered. The proposed model of fluctuations of charge distributions gives reasonable estimates for the length of defects regions and the distance between...

  • High resolution electron microscopy study of damage created in Si-implanted InP. Zheng, P.; Ruault, M.-O.; Pitaval, M.; Descouts, B.; Krauz, P.; Gasgnier, M.; Crestou, J. // Applied Physics Letters;9/23/1991, Vol. 59 Issue 13, p1594 

    Examines the damage created by silicon ion implantation on {011} oriented indium phosphide crystals. Use of high resolution transmission electron microscopy; Comparison of cluster density and size with {001} oriented crystals; Obtainment of an amorphous zone at the highest implantation dose.

  • Chemical beam epitaxy of InGaAs. Tsang, W. T. // Journal of Applied Physics;8/1/1985, Vol. 58 Issue 3, p1415 

    Discusses a study on indium-gallium-arsenic lattice matched to indium phosphide substrate and grown on by chemical epitaxy (CBE). Surface morphologies; Relevance of the electron concentration and mobilities to the source purity of the trimethylarsine used; Composition and thickness uniformities...

  • Origin and penetration depth of thermal degradation in InP. Sartorius, B.; Pfanner, K. // Applied Physics Letters;6/19/1989, Vol. 54 Issue 25, p2539 

    Thermal degradation is examined in a development stage in which local damage in the crystal lattice already exists, although the known surface deformations are not yet visible. The existence of these crystal defects is shown by means of luminescence microscopy. Depth profiles reveal that the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics