Resonant tunneling oscillations in a GaAs-AlxGa1-xAs heterostructure at room temperature

Shewchuk, T. J.; Chapin, P. C.; Coleman, P. D.; Kopp, W.; Fischer, R.; Morkoç, H.
March 1985
Applied Physics Letters;3/1/1985, Vol. 46 Issue 5, p508
Academic Journal
This letter reports the first observation of resonant tunneling negative differential resistance (NDR) through a double barrier GaAs-AlxGa1-xAs -GaAs-AlxGa1-x As-GaAs structure at room temperature. The NDR yields radio frequency oscillations at 300 K in a coaxial cable circuit that compare closely to those of a standard 1N3716 tunnel diode.


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