TITLE

Etching of deep grooves for the precise positioning of cleaves in semiconductor lasers

AUTHOR(S)
Bowers, J. E.; Hemenway, B. R.; Wilt, D. P.
PUB. DATE
March 1985
SOURCE
Applied Physics Letters;3/1/1985, Vol. 46 Issue 5, p453
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Photoelectrochemical etching of InP is used to etch deep (80 μm), narrow (20 μm) grooves. The grooves are used to precisely position cleaves in semiconductor lasers and to demonstrate the first wafer processing of long/short cleaved-coupled-cavity (C3) lasers. Large numbers of low threshold C3 lasers wth very similar cavity lengths were obtained.
ACCESSION #
9817175

 

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