Cd diffused mesa-substrate buried heterostructure InGaAsP/InP laser

Yi, M. B.; Lu, L. T.; Kapon, E.; Rav-Noy, Z.; Margalit, S.; Yariv, A.
February 1985
Applied Physics Letters;2/15/1985, Vol. 46 Issue 4, p328
Academic Journal
A new type of buried heterostructure InGaAsP/InP lasers grown by a single-step liquid phase epitaxy on Cd diffused mesa substrate is described. These lasers exhibit excellent current and optical confinement. Threshold currents as low as 15 mA are achieved for a laser with a 2-µmwide active region.


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