TITLE

Study of the kinetics and mechanism of the thermal nitridation of SiO2

AUTHOR(S)
Vasquez, R. P.; Madhukar, A.; Grunthaner, F. J.; Naiman, M. L.
PUB. DATE
February 1985
SOURCE
Applied Physics Letters;2/15/1985, Vol. 46 Issue 4, p361
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
X-ray photoelectron spectroscopy (XPS) has been used to study the nitridation time and temperature dependence of the nitrogen distribution in thermally nitrided SiO[sub 2] films. The XPS data show that the maximum nitrogen concentration near the (SiO[sub x] N[sub y])/Si interface is initially at the interface, but moves 20-25 Ã… away from the interface with increasing nitridation time. Computer modeling of the kinetic processes involved is carried out and reveals a mechanism in which diffusing species, initially consisting primarily of nitrogen, react with the substrate, followed by formation of the oxygen-rich oxynitride due to reaction of the diffusing oxygen displaced by the slower nitridation of the SiO[sub 2]. The data are consistent with this mechanism provided the influence of the interfacial strain on the nitridation and oxidation kinetics is explicitly accounted for.
ACCESSION #
9817153

 

Related Articles

  • Reaction pathways in remote plasma nitridation of ultrathin SiO[sub 2] films. Niimi, Hiro; Khandelwal, Amit; Lamb, H. Henry; Lucovsky, Gerald // Journal of Applied Physics;1/1/2002, Vol. 91 Issue 1, p48 

    Low-temperature nitridation of 3 nm SiO[sub 2] films using He/N[sub 2] and N[sub 2] remote radio frequency (rf) plasmas was investigated. On-line Auger electron spectroscopy and angle-resolved x-ray photoelectron spectroscopy (ARXPS) were employed to determine the concentration, spatial...

  • Effect of N[sub 2]O plasma treatment on the stabilization of water absorption in fluorinated silicon-oxide thin films fabricated by electron-cyclotron-resonance plasma-enhanced chemical-vapor deposition. Kim, S. P.; Choi, S. K.; Park, Youngsoo; Chung, Ilsub // Applied Physics Letters;3/11/2002, Vol. 80 Issue 10, p1728 

    The variation of residual stress with the water absorption was reduced drastically by the N[sub 2]O plasma treatment for fluorinated silicon-oxide thin films. Fourier transformed infrared spectroscopy analysis showed that the film was oxidized by the plasma treatment. It was also determined that...

  • Density and nitrogen content of ultrathin silicon oxide gate films grown using in situ pyrolytic-gas passivation. Yamada, Hiroshi // Journal of Applied Physics;4/15/2003, Vol. 93 Issue 8, p4902 

    The density and nitrogen content of 3.5-6.5-nm-thick silicon oxide films grown by ultradry oxidation using the recently proposed in situ passivation method that uses a little pyrolytic N[sub 2]O gas were determined by a charged-particle activation analysis. It was confirmed that the density...

  • Incorporation of N into Si/SiO[sub 2] interfaces: Molecular orbital calculations to evaluate... Ushio, Jiro; Maruizumi, Takuya; Miyao, Masanobu // Applied Physics Letters;8/2/1999, Vol. 75 Issue 5, p680 

    Investigates the determining factor the accumulation of nitrogen at a silicon/silicon oxide interface during oxynitridation of the interface using a quantum-chemical method. Relaxation of interface strain when the interface has a certain type of oxygen-vacancy defect; Role of the exothermicity...

  • Atomic transport and chemical stability of nitrogen in ultrathin HfSiON gate dielectrics. Driemeier, C.; Bastos, K.P.; Soares, G.V.; Miotti, L.; Pezzi, R.P.; Baumvol, I.J.R.; Punchaipetch, P.; Pant, G.; Gnade, B.E.; Wallace, R.M. // Applied Physics A: Materials Science & Processing;2005, Vol. 80 Issue 5, p1045 

    HfSiO and HfSiON films with thicknesses compatible with the requirements for gate dielectrics alternatives to SiO2 in ultra-large scale integration silicon-based CMOSFET devices were deposited on an ultrathin HfSiO15N interfacial layer on Si(001). These structures were submitted to thermal...

  • Boron, aluminum, nitrogen, and oxygen impurities in silicon carbide. Vlaskina, S. I.; Vlaskin, V. I.; Podlasov, S. A.; Rodionov, V. E.; Svechnikov, G. S. // Semiconductor Physics, Quantum Electronics & Optoelectronics;2007, Vol. 10 Issue 2, p21 

    Diffusion of boron, aluminum, and oxygen was conducted at temperatures 1600 - 1700 °C. Very pure original n-SiC crystal (6H-SiC) specially grown by the Lely method annealed in oxygen during 2 h at 1700 °C, in argon during 2 h at 1700 °C, with aluminum and silicon oxide powder during 2...

  • Molecular-nanolayer-induced suppression of in-plane Cu transport at Cu-silica interfaces. Gandhi, D. D.; Ganesan, P. G.; Chandrasekar, V.; Gan, Z.; Mhaisalkar, S. G.; Li, H.; Ramanath, G. // Applied Physics Letters;4/16/2007, Vol. 90 Issue 16, p163507 

    Recent reports have shown that molecular nanolayers (MNLs) can be used to inhibit Cu diffusion across Cu-dielectric interfaces in nanodevice wiring. Here, we demonstrate that MNLs can curtail in-plane interfacial Cu transport. Cu lines embedded in SiO2 in interdigitated comb configurations were...

  • Thermally stimulated studies of bismuth silicon oxide crystal. Takamori, Takeshi; Just, Dieter // Journal of Applied Physics;1/15/1990, Vol. 67 Issue 2, p848 

    Measures the thermally stimulated current (TSC) of nominally undoped bismuth silicon oxide crystals after ultraviolet excitation at liquid nitrogen temperature. Information on TSC without bias voltage; Effect of field strength; Determination of energy level.

  • Mechanisms of silicon oxidation at low temperatures by microwave-excited O2 gas and O2-N2 mixed gas. Yasuda, Y.; Zaima, S.; Kaida, T.; Koide, Y. // Journal of Applied Physics;3/1/1990, Vol. 67 Issue 5, p2603 

    Provides information on a study concerning the mechanisms of silicon oxidation at low temperatures by microwave excitation of oxygen[sub2] gas and on the further increase by that of oxygen[sub2]-nitrogen[sub2] mixed gas. Effect on the microwave excitation of oxygen and nitrogen gas; Discussion...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics