Low spin density amorphous hydrogenated germanium prepared by homogeneous chemical vapor deposition

Reimer, J. A.; Scott, B. A.; Wolford, D. J.; Nijs, J.
February 1985
Applied Physics Letters;2/15/1985, Vol. 46 Issue 4, p369
Academic Journal
Structural [nuclear magnetic and electron spin resonance (ESR), infrared spectroscopy], optical (absorption, photoacoustic, photoluminescence), and electrical data are presented for amorphous hydrogenated germanium (a-Ge:H) prepared by homogeneous chemical vapor deposition (HOMOCVD). Like HOMOCVD prepared amorphous hydrogenated silicon, these a-Ge:H materials exhibit very low ESR spin densities and systematically varying optical gaps and hydrogen contents. Nevertheless, the material displays no subband gap photoluminescence and minimal photoconductivity, suggesting that a spinless defect may ultimately limit the device application of all types of a-Ge:H and a-(Ge,Si):H films.


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