Transmission electron microscopy of liquid phase epitaxial Hg1-xCdxTe layers on CdTe substrates

Wood, Susan; Greggi, J.; Takei, W. J.
February 1985
Applied Physics Letters;2/15/1985, Vol. 46 Issue 4, p371
Academic Journal
Epitaxial Hg[sub 1-x] Cd[sub x] Te films were grown on (111)A CdTe substrates by the tellurium solvent, horizontal tube slider liquid phase epitaxy technique. Their microstructures were subsequently investigated by both planar and cross-sectional transmission electron microscopy (TEM). Planar TEM showed the top surface of the films to be precipitate free with a general dislocation density <10[sup 6]/cm² except for localized regions containing high dislocation densities associated with linear surface features on the Hg[sub 1-x] Cd[sub x] Te. Cross-sectional TEM showed the interface region to be nonplanar due to meltback during epilayer growth. A three-dimensional dislocation structure was confined to a band in the interface region having a graded Hg composition.


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