Carrier trapping in room-temperature, time-resolved photoluminescence of a GaAs/AlxGa1-xAs multiple quantum well structure grown by metalorganic chemical vapor deposition

Fouquet, J. E.; Siegman, A. E.; Burnham, R. D.; Paoli, T. L.
February 1985
Applied Physics Letters;2/15/1985, Vol. 46 Issue 4, p374
Academic Journal
The time decay of the room-temperature photoluminescence from the n = 1 transition in a multiple quantum well structure grown by metalorganic chemical vapor deposition is observed to depend strongly on excitation energy density. For low excitation (0.2 µJ/cm²) an exponential 3-ns decay is observed, while for high excitation (120 µJ/cm²) the decay lengthens to 45 ns. In the case of higher excitation, the photoluminescence decay rate is observed to increase after excitation and initial decay. The excitation energy dependence of the initial decay can be explained by saturation of carrier traps, and the later speedup of photoluminescence decay can be explained by the release of carriers from the traps and subsequent refilling. Time-integrated photoluminescence data qualitatively support the trapping interpretation. This is the first report, to the best of our knowledge, of time-resolved photoluminescence in a metalorganic chemical vapor deposition grown GaAs/Al[sub x] Ga[sub [sub 1-x] As quantum well structure.


Related Articles

  • Photoluminescence of metalorganic-chemical-vapor-deposition-grown GaInNAs/GaAs single quantum wells. Manasreh, M. O.; Friedman, D. J.; Ma, W. Q.; Workman, C. L.; George, C. E.; Salamo, G. J. // Applied Physics Letters;1/27/2003, Vol. 82 Issue 4, p514 

    Photoluminescence (PL) spectra of interband transitions in GaInNAs/GaAs single quantum wells grown by metalorganic chemical vapor deposition on semi-insulating GaAs substrates were measured at 77 K for several samples grown with different In compositions and dimethylhydrazine (DMH)/III ratios....

  • A confocal photoluminescence study of metalorganic chemical vapor deposition growth on patterned GaAs substrates. Fong, Yu-Chue; Armour, E. A.; Hersee, S. D.; Brueck, S. R. J. // Journal of Applied Physics;3/15/1994, Vol. 75 Issue 6, p3049 

    Discusses a study which assessed the confocal photoluminescence of metalorganic chemical vapor deposition growth on gallium arsenide substrates. Overview of confocal photoluminescence; Experimental procedures; Description of gallium arsenide quantum well.

  • Disorder-defined buried-heterostructure AlxGa1-xAs-GaAs quantum well lasers by diffusion of silicon and oxygen from Al-reduced SiO2. Guido, L. J.; Major, J. S.; Baker, J. E.; Holonyak, N.; Burnham, R. D. // Applied Physics Letters;3/27/1989, Vol. 54 Issue 13, p1265 

    We describe a convenient method utilizing chemical reduction of SiO2 by Al (from AlxGa1-xAs) to generate Si and O for impurity-induced layer disordering (IILD) of AlxGa1-xAs-GaAs quantum well heterostructures (QWHs). Experimental data show that Si-O diffusion (from SiO2) is an effective source...

  • Zinc Doping Profile in AlGaAs/GaAs Heteroepitaxial Structures Grown by Metalorganic Chemical Vapor Deposition. Akchurin, R. Kh.; Andreev, A. Yu.; Bulaev, P. V.; Zalevskii, I. D.; Marmalyuk, A. A.; Nikitin, D. B.; Padalitsa, A. A. // Inorganic Materials;Aug2004, Vol. 40 Issue 8, p787 

    The Zn profile in AlxGa1-xAs/GaAs (x = 0.2-0.4) quantum-well heteroepitaxial structures doped during growth by metalorganic chemical vapor deposition is modeled with allowance made for the diffusional broadening of the nominal doping profile. Experimentally determined carrier distributions in...

  • Cathodoluminescence and photoluminescence studies of dislocations in GaAs/AlGaAs quantum wells. Araújo, D.; Oelgart, G.; Ganière, J.-D.; Reinhart, F. K. // Journal of Applied Physics;8/1/1993, Vol. 74 Issue 3, p1997 

    Examines the optical properties of low pressure metal organic vapor deposition grown gallium arsenide/aluminum-gallium-arsenic single quantum well structures with grown-in dislocations. Use of low temperature cathodoluminescence and photoluminescence; Shift of the exciton photoluminescence line...

  • Photoluminescence decay time studies of type II GaAs/AlAs quantum-well structures. Dawson, P.; Moore, K. J.; Foxon, C. T.; ‘t Hooft, G. W.; van Hal, R. P. M. // Journal of Applied Physics;5/1/1989, Vol. 65 Issue 9, p3606 

    Presents information on a study which investigated the temperature dependence of the photoluminescence decay kinetics of a series of gallium arsenide (GaAs)/aluminum arsenide (AlAs) quantum-well structures where GaAs thickness was kept constants and AlAs was varied. Methodology of the study;...

  • Thermal ionization of excitons in GaAs/AlGaAs quantum well structures. Colocci, M.; Gurioli, M.; Vinattieri, A. // Journal of Applied Physics;9/15/1990, Vol. 68 Issue 6, p2809 

    Focuses on the photoluminescence and photoluminescence excitation spectra performed on gallium arsenide/aluminum-gallium-arsenic quantum well structures. Thermal equilibrium between excitons, electrons and holes; Comparison of the emission from different wells grown in identical conditions;...

  • Gallium-implantation-enhanced intermixing of close-surface GaAs/AlAs/AlGaAs double-barrier quantum wells. Kupka, R. K.; Chen, Y. // Journal of Applied Physics;8/15/1995, Vol. 78 Issue 4, p2355 

    Focuses on the intermixing of close-surface gallium (Ga) arsenide/aluminum (Al) arsenide/Al-Ga-arsenic double-barrier quantum wells (DBQW) by positive Ga implantation. Photoluminescence blue shifts of lower-dose implantations; Influence of the low-energy surface plasma damage on the...

  • Lateral interface mixing in GaAs quantum well wire arrays. Fukui, Takashi; Saito, Hisao; Tokura, Yasuhiro // Applied Physics Letters;11/6/1989, Vol. 55 Issue 19, p1958 

    GaAs quantum well wires with an (AlGaAs)1/2(GaAs)1/2 fractional-layer superlattice(FLS) are fabricated on slightly misoriented (001)GaAs substrates by metalorganic chemical vapor deposition. Transmission electron microscope images show clear contrast for the GaAs quantum wire array, although the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics