1.54-μm electroluminescence of erbium-doped silicon grown by molecular beam epitaxy

Ennen, H.; Pomrenke, G.; Axmann, A.; Eisele, K.; Haydl, W.; Schneider, J.
February 1985
Applied Physics Letters;2/15/1985, Vol. 46 Issue 4, p381
Academic Journal
The feasibility of producing erbium-doped silicon light-emitting diodes by molecular beam epitaxy is demonstrated. The p-n junctions are formed by growing an erbium-doped p-type epitaxial silicon layer on an n-type silicon substrate. When the diodes are bland in the forward direction at 77 K they show an intense sharply structured electroluminescence spectrum at 1.54 µm. This luminescence is assigned to the internal 4f-4f transition [sup 4]I[sub 13/2]→[sup 4]I[sub 15/2] of Er[sup 3+] (4f[sup 11]).


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