TITLE

p-n junction formation in InSb and InAs1-xSbx by metalorganic chemical vapor deposition

AUTHOR(S)
Chiang, P. K.; Bedair, S. M.
PUB. DATE
February 1985
SOURCE
Applied Physics Letters;2/15/1985, Vol. 46 Issue 4, p383
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
p-n junctions have been fabricated in InSb and InAs[sub 1-x] Sb[sub x] (0.4 < x < 0.7) using metalorganic chemical vapor deposition. These junctions showed soft breakdown in addition to forward characteristics with a diode factor greater than 2. The ternary alloy has a cut-off wavelength in the 8-11-µm range, thus providing a potential material system for detectors covering the 8-12-µm range.
ACCESSION #
9817145

 

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