TITLE

Monolithic integration of a pin photodiode and a field-effect transistor using a new fabrication technique—graded step process

AUTHOR(S)
Miura, S.; Machida, H.; Wada, O.; Nakai, K.; Sakurai, T.
PUB. DATE
February 1985
SOURCE
Applied Physics Letters;2/15/1985, Vol. 46 Issue 4, p389
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A new fabrication technique of optoelectronic integrated circuit's (OEIC's), the graded step process, has been developed and found to improve the photolithographic yield and the overall process reproducibility. By applying this technique, a laterally integrated pin photodiode/fieldeffect transistor has been fabricated and shown to exhibit a high-speed response and a high sensitivity. This result indicates the potential of this process for applications to larger scale OEIC's.
ACCESSION #
9817143

 

Related Articles

  • Performance characteristics of In0.6Ga0.4As/In0.52Al0.48As modulation-doped field-effect transistor monolithically integrated with In0.53Ga0.47As p-i-n photodiodes. Zebda, Y.; Bhattacharya, P. K.; Pavlidis, D.; Harrang, J. P. // Journal of Applied Physics;8/15/1990, Vol. 68 Issue 4, p1918 

    Presents a study that assessed the performance characteristics of an integrated p-i-n photodiode/modulation-doped field-effect transistor (MODFET). Information on optoelectronic integrated circuits; Analysis of the unconnected photodiodes; Analysis of the possibility of implanting and...

  • Application of nanoimprinting technology to organic field-effect transistors. Wei-Yang Chou; Ming-Hua Chang; Horng-Long Cheng; Shih-Po Yu; Yung-Chun Lee; Cheng-Yu Chiu; Chung-Yi Lee; Dun-Ying Shu // Applied Physics Letters;Feb2010, Vol. 96 Issue 8, p083305 

    The charge carrier transport efficiency and issues of patterning in organic semiconductors limit the potential range of microelectronic and optoelectronic applications of organic devices in nanoscale. We demonstrate high-performance organic field-effect transistors (OFETs) with a mobility of...

  • Direct observation of a widely tunable bandgap in bilayer graphene. Yuanbo Zhang; Tsung-Ta Tang; Girit, Caglar; Zhao Hao; Martin, Michael C.; Zettl, Alex; Crommie, Michael F.; Shen, Y. Ron; Feng Wang // Nature;6/11/2009, Vol. 459 Issue 7248, p820 

    The electronic bandgap is an intrinsic property of semiconductors and insulators that largely determines their transport and optical properties. As such, it has a central role in modern device physics and technology and governs the operation of semiconductor devices such as p–n junctions,...

  • High-performance all-polymer integrated circuits. Gelinck, G. H.; Gelinck, G.H.; Geuns, T. C. T.; Geuns, T.C.T.; de Leeuw, D. M.; de Leeuw, D.M. // Applied Physics Letters;9/4/2000, Vol. 77 Issue 10 

    In this letter, we demonstrate the integration of all-polymer field-effect transistors in fully functional integrated circuits with operating frequencies of several kHz. One of the key items is an approach to incorporate low-Ohmic vertical interconnects compatible with an all-polymer approach....

  • Improve FET-based gain control. Mancini, Ron // EDN;12/06/2001, Vol. 46 Issue 27, p112 

    Focuses on the enhancement of field-effect transistors (FET)-based gain control circuits. Influence of FET in the limit of circuit configuration in a noninverting op-amp circuit; Reduction of the transfer function; Determination of the minimum drain-source resistance for the FET; Necessity of a...

  • ZnO-Based Ultraviolet Photodetectors. Kewei Liu; Sakurai, Makoto; Aono, Masakazu // Sensors (14248220);2010, Vol. 10 Issue 9, p8604 

    Ultraviolet (UV) photodetection has drawn a great deal of attention in recent years due to a wide range of civil and military applications. Because of its wide band gap, low cost, strong radiation hardness and high chemical stability, ZnO are regarded as one of the most promising candidates for...

  • High-speed solar-blind photodetectors with indium-tin-oxide Schottky contacts. Biyikli, Necmi; Kimukin, Ibrahim; Kartaloglu, Tolga; Aytur, Orhan; Ozbay, Ekmel // Applied Physics Letters;4/7/2003, Vol. 82 Issue 14, p2344 

    We report A1GaN/GaN-based high-speed solar-blind photodetectors with indium-tin-oxide Schottky contacts. Current-voltage, spectral responsivity, and high-frequency response characterizations were performed on the fabricated Schottky photodiodes. Low dark currents of < 1 pA at 20 V reverse bias...

  • eGaN® FET- Silicon Power Shoot-Out Volume 11: Optimizing FET On-Resistance. Strydom, Johan // Power Electronics Technology Exclusive Insight;10/1/2012, p7 

    The article discusses the die size optimization process to show the performance improvements that can be achieved with eGan field effect transistor (FET) over silicon metal-oxide-semiconductor field-effect transistor (MOSFET). It discusses the optimization of eGan FETs by balancing static and...

  • A NOVEL FULL ADDER CELL BASED ON CARBON NANOTUBE FIELD EFFECT TRANSISTORS. Ghorbani, Ali; Sarkhosh, Mehdi; Fayyazi, Elnaz; Mahmoudi, Neda; Keshavarzian, Peiman // International Journal of VLSI Design & Communication Systems;Jun2012, Vol. 3 Issue 3, p33 

    Presenting a novel full adder cell will be increases all the arithmetic logic unit performance. In this paper, We present two new full adder cell designs using carbon nanotube field effect transistors (CNTFETs). In the first design we have 42 transistors and 5 pull-up resistance so that we have...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics