Monolithic integration of a pin photodiode and a field-effect transistor using a new fabrication technique—graded step process

Miura, S.; Machida, H.; Wada, O.; Nakai, K.; Sakurai, T.
February 1985
Applied Physics Letters;2/15/1985, Vol. 46 Issue 4, p389
Academic Journal
A new fabrication technique of optoelectronic integrated circuit's (OEIC's), the graded step process, has been developed and found to improve the photolithographic yield and the overall process reproducibility. By applying this technique, a laterally integrated pin photodiode/fieldeffect transistor has been fabricated and shown to exhibit a high-speed response and a high sensitivity. This result indicates the potential of this process for applications to larger scale OEIC's.


Related Articles

  • Model device parameters for a 10-Gb/s HEMT modulator driver IC. Gao Jianjun; Gao Baoxin; Pan Bo; Liang Chunguang // Microwave & Optical Technology Letters;12/5/2002, Vol. 35 Issue 5, p357 

    This paper presents research on device parameters for a 2.5–10-Gb/s high electron mobility transistor (HEMT) modulator driver IC. The effect of DC and capacitance parameters on the driver IC is discussed, and their ability to meet the requirements of the driver IC are calculated. The...

  • Performance characteristics of In0.6Ga0.4As/In0.52Al0.48As modulation-doped field-effect transistor monolithically integrated with In0.53Ga0.47As p-i-n photodiodes. Zebda, Y.; Bhattacharya, P. K.; Pavlidis, D.; Harrang, J. P. // Journal of Applied Physics;8/15/1990, Vol. 68 Issue 4, p1918 

    Presents a study that assessed the performance characteristics of an integrated p-i-n photodiode/modulation-doped field-effect transistor (MODFET). Information on optoelectronic integrated circuits; Analysis of the unconnected photodiodes; Analysis of the possibility of implanting and...

  • A NOVEL MESFET-COMPATIBLE GaAs OPTOELECTRONIC SWITCH. Rlesz, Ferenc; Szentpáli, B.; Gottwald, P.; Németh-Sallay, M. // Microwave & Optical Technology Letters;3/1/92, Vol. 5 Issue 3, p112 

    Photoconductive optoelectronic pulse-forming switches have been fabricated from vapor-phase epitaxially grown GaAs-based layer structures. The fabrication process is compatible with the MESFET/ MMIC technology. The light-absorbing region is thinned by chemical etching, thus changing the actual...

  • III-V MONOLITHIC RESONANT PHOTORECEIVER USING LOCAL EPITAXY AND LARGE LATTICE MISMATCH MATERIAL. Aboulhouda, S.; Vilcot, J. P.; Razeghl, M.; Decoster, D.; Francois, M.; Maricot, S.; Aboudou, A. // Microwave & Optical Technology Letters;5/1/91, Vol. 4 Issue 6, p217 

    It is shown that local and large lattice mismatch epitaxies could be useful techniques for the fabrication of optoelectronic integrated circuits. As an example, we fabricated a monolithic resonant photoreceiver which associates a long-wavelength metal-semiconductor-metal photodetector, a GaAs...

  • Application of nanoimprinting technology to organic field-effect transistors. Wei-Yang Chou; Ming-Hua Chang; Horng-Long Cheng; Shih-Po Yu; Yung-Chun Lee; Cheng-Yu Chiu; Chung-Yi Lee; Dun-Ying Shu // Applied Physics Letters;Feb2010, Vol. 96 Issue 8, p083305 

    The charge carrier transport efficiency and issues of patterning in organic semiconductors limit the potential range of microelectronic and optoelectronic applications of organic devices in nanoscale. We demonstrate high-performance organic field-effect transistors (OFETs) with a mobility of...

  • Tuned polarity and enhanced optoelectronic performances of few-layer Nb0.125Re0.875Se2 flakes. Sijie Liu; Le Huang; Kedi Wu; Zhongming Wei; Beiju Huang; Xiuqing Meng; Sefaattin Tongay; Jian Liu; Jingbo Li; Hongda Chen // Applied Physics Letters;9/12/2016, Vol. 109 Issue 11, p112102-1 

    Both N-type and P-type semiconducting materials are essential in the integrated circuit and optoelectronic industry. Herein, the intrinsic P-type ReSe2 is converted to N-type by Nb-alloying. Despite the efficient carrier type conversion, we also measured the electric characteristics and...

  • Improve FET-based gain control. Mancini, Ron // EDN;12/06/2001, Vol. 46 Issue 27, p112 

    Focuses on the enhancement of field-effect transistors (FET)-based gain control circuits. Influence of FET in the limit of circuit configuration in a noninverting op-amp circuit; Reduction of the transfer function; Determination of the minimum drain-source resistance for the FET; Necessity of a...

  • High-performance all-polymer integrated circuits. Gelinck, G. H.; Gelinck, G.H.; Geuns, T. C. T.; Geuns, T.C.T.; de Leeuw, D. M.; de Leeuw, D.M. // Applied Physics Letters;9/4/2000, Vol. 77 Issue 10 

    In this letter, we demonstrate the integration of all-polymer field-effect transistors in fully functional integrated circuits with operating frequencies of several kHz. One of the key items is an approach to incorporate low-Ohmic vertical interconnects compatible with an all-polymer approach....

  • Direct observation of a widely tunable bandgap in bilayer graphene. Yuanbo Zhang; Tsung-Ta Tang; Girit, Caglar; Zhao Hao; Martin, Michael C.; Zettl, Alex; Crommie, Michael F.; Shen, Y. Ron; Feng Wang // Nature;6/11/2009, Vol. 459 Issue 7248, p820 

    The electronic bandgap is an intrinsic property of semiconductors and insulators that largely determines their transport and optical properties. As such, it has a central role in modern device physics and technology and governs the operation of semiconductor devices such as p–n junctions,...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics