Oxygen distribution in a horizontal Bridgman-grown, semi-insulating GaAs ingot

Shikano, Koji; Kobayashi, Kenji; Miyazawa, Shintaro
February 1985
Applied Physics Letters;2/15/1985, Vol. 46 Issue 4, p391
Academic Journal
Oxygen concentration in a horizontal Bridgman-grown, chromium and oxygen-doped, semiinsulating GaAs ingot was analyzed using charged particle activation analysis. The oxygen concentration ranged from 2.0 × 10[sup 15] at seed end to 7.2 × 10[sup 15] cm[sup -3] at tail end. The change of oxygen concentration measured along the length of ingot was in accordance with the normalfreeze equation. The effective distribution coefficient of oxygen was estimated to be 0.39.


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