TITLE

Oxygen distribution in a horizontal Bridgman-grown, semi-insulating GaAs ingot

AUTHOR(S)
Shikano, Koji; Kobayashi, Kenji; Miyazawa, Shintaro
PUB. DATE
February 1985
SOURCE
Applied Physics Letters;2/15/1985, Vol. 46 Issue 4, p391
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Oxygen concentration in a horizontal Bridgman-grown, chromium and oxygen-doped, semiinsulating GaAs ingot was analyzed using charged particle activation analysis. The oxygen concentration ranged from 2.0 × 10[sup 15] at seed end to 7.2 × 10[sup 15] cm[sup -3] at tail end. The change of oxygen concentration measured along the length of ingot was in accordance with the normalfreeze equation. The effective distribution coefficient of oxygen was estimated to be 0.39.
ACCESSION #
9817142

 

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