Electrical transport properties of tungsten silicide thin films

Li, B. Z.; Aitken, R. G.
February 1985
Applied Physics Letters;2/15/1985, Vol. 46 Issue 4, p401
Academic Journal
The electrical transport properties of cosputtered tungsten silicide films were investigated. The microstructure of the annealed film was determined by x-ray diffraction. Both resistivity and Hall coefficients for the WSi[sub 2] films were measured in the temperature range 80-300 K. The current carriers in tungsten disilicide were found to be positive holes. The carrier concentration determined from this experiment is ∼1 × 10[sup 22] cm[sup -3] which does not change with either annealing process or measuring temperature. The resistivity of the WSi[sub 2] film in the measured temperature range increases approximately linearly with temperature. The carrier mobility and its temperature dependence were also studied.


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