TITLE

Electrical transport properties of tungsten silicide thin films

AUTHOR(S)
Li, B. Z.; Aitken, R. G.
PUB. DATE
February 1985
SOURCE
Applied Physics Letters;2/15/1985, Vol. 46 Issue 4, p401
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The electrical transport properties of cosputtered tungsten silicide films were investigated. The microstructure of the annealed film was determined by x-ray diffraction. Both resistivity and Hall coefficients for the WSi[sub 2] films were measured in the temperature range 80-300 K. The current carriers in tungsten disilicide were found to be positive holes. The carrier concentration determined from this experiment is ∼1 × 10[sup 22] cm[sup -3] which does not change with either annealing process or measuring temperature. The resistivity of the WSi[sub 2] film in the measured temperature range increases approximately linearly with temperature. The carrier mobility and its temperature dependence were also studied.
ACCESSION #
9817139

 

Related Articles

  • The high-temperature stability of chemically vapor-deposited tungsten-silicon couples rapid thermal annealed in ammonia and argon. Broadbent, E. K.; Morgan, A. E.; Flanner, J. M.; Coulman, B.; Sadana, D. K.; Burrow, B. J.; Ellwanger, R. C. // Journal of Applied Physics;12/15/1988, Vol. 64 Issue 12, p6721 

    Presents information on a study which evaluated the feasibility of suppressing silicide formation by incorporating nitrogen into the chemically vapor deposited tungsten film prior to subsequent high-temperature processing. Methodology of the study; Results and discussion; Conclusion.

  • The formation of thin-film tungsten silicide annealed in ultrahigh vacuum. Siegal, M. P.; Graham, W. R.; Santiago, J. J. // Journal of Applied Physics;12/15/1989, Vol. 66 Issue 12, p6073 

    Presents study which fabricated thin film tungsten silicide by annealing in ultrahigh vacuum. Experimental details; Results and discussion; Conclusion.

  • Plasma oxidation mechanisms in tungsten silicide thin films. Pérez-Casero, R.; Perrière, J.; Enard, J. P.; Martínez-Duart, J. M. // Journal of Applied Physics;7/1/1995, Vol. 78 Issue 1, p514 

    Presents a study which investigated plasma oxidation mechanisms in tungsten silicide thin films. Analysis of the oxidation kinetics and the elemental depth distribution in the films; Factor which activates oxygen diffusion; Proposal on a mechanism of plasma oxidation of tungsten silicide films.

  • A study of structural, electrical, and optical properties of low-pressure chemical vapor deposition tungsten silicide films processed at elevated temperatures. Shenai, Krishna // Journal of Applied Physics;3/15/1991, Vol. 69 Issue 6, p3646 

    Focuses on a study which investigated tungsten silicide films deposited by the low-pressure chemical vapor deposition technique on polysilicon at elevated processing temperatures. Consequence of annealing of as-deposited silicon-rich tungsten silicide films in nitrogen; Analysis of the...

  • Thermal reaction of WSix thin films with underlying Al films. Kikkawa, Takamaro; Endo, Nobuhiro // Journal of Applied Physics;8/15/1991, Vol. 70 Issue 4, p2370 

    Presents a study which investigated thermal reactions of tungsten silicide (WSi[subx]) thin films underlying aluminum (Al) films in WSi[subx]/Al bilayers. Observation of the morphological deformation in the WSi[subx]/Al bilayer; Examination of the WSi[subx]-film thickening and the Al-film...

  • Raman study of the formation of tungsten silicide thin films. Vuppuladhadium, Rama; Jackson, Howard E.; Boyd, Joseph T. // Journal of Applied Physics;6/1/1993, Vol. 73 Issue 11, p7887 

    Presents a study which examined the formation of tungsten silicide thin films using Raman scattering. Contribution of Raman scattering in understanding structural properties of thin films; Method used in preparing and depositing the tungsten film; Characteristics of the rapid thermally annealed...

  • Ti silicide formation on thin-film silicon on insulator. Lin, Chenglu; Zhou, Wei; Zou, Shichang; Hemment, P. L. F. // Applied Physics Letters;5/14/1990, Vol. 56 Issue 20, p2004 

    In this letter the formation of Ti silicide on thin-film silicon on insulator has been investigated. The experimental results indicated that uniform TiSi2 layers with a low sheet resistance of 4.0–4.5 Ω/[Laplacian_variant] can be formed on thin-film silicon on insulator with a high...

  • Very thin CoSi[sub 2] films by Co sputtering. Maszara, W.P. // Applied Physics Letters;3/1/1993, Vol. 62 Issue 9, p961 

    Investigates the structure, resistivity and thermal stability of CoSi[sub 2] films. Extraction of the bulk and surface components of resistivity; Interdependence of sheet resistance with the ramp-up rate; Basic methods for thin silicide film formation.

  • Electronic structure of nickel silicide in subhalf-micron lines and blanket films: An x-ray...  // Applied Physics Letters;5/10/1999, Vol. 74 Issue 19, p2893 

    Studies the electronic structure of nickel silicide in subhalf-micron lines and blanket films. Characterization of Ni-Si blanket films; Use of metal silicides in integrated circuits.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics