Measurement of mobility-lifetime product in hydrogenated amorphous silicon p-i-n type diodes

Könenkamp, R.; Hermann, A. M.; Madan, A.
February 1985
Applied Physics Letters;2/15/1985, Vol. 46 Issue 4, p405
Academic Journal
We have applied the junction recovery technique to different configurations of hydrogenated amorphous silicon type diodes and show that the recovered charge consists predominantly of holes. The technique is used for the measurement of the mobility-lifetime product for recombination, which was found to be dependent upon the level and type of doping.


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