TITLE

Channel mobility enhancement in InP metal-insulator-semiconductor field-effect transistors

AUTHOR(S)
Pande, K. P.; Gutierrez, D.
PUB. DATE
February 1985
SOURCE
Applied Physics Letters;2/15/1985, Vol. 46 Issue 4, p416
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The channel mobility of the InP metal-insulator-semiconductor field-effect transistor (MISFET's) was enhanced by incorporating a phosphorus-rich interfacial oxide between the SiO[sub 2] gate dielectric and InP substrate. This phosphorus-rich oxide was grown using an indirect, plasma-enhanced chemical vapor deposition process followed by deposition of the SiO[sub 2] gate dielectric using the same technique. The metal-insulator-semiconductor structures, formed by aluminum deposition on the SiO[sub 2], did not exhibit any hysteresis in its capacitance-voltage characteristic. An interface state density as low as 8 × 10[sup 10] cm[sup -2] eV[sup -1] was achieved for such an MIS system. A channel mobility of 3450 cm²/Vs at room temperature was achieved for 4-µm gate length InP MISFET's. These MISFET's did not show any significant drift of channel current during six hours of continuous operation. These excellent characteristics are postulated to result from suppression of surface defects during the deposition of the SiO[sub 2] gate dielectric.
ACCESSION #
9817133

 

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