TITLE

Hydrogen localization near boron in silicon

AUTHOR(S)
Pankove, J. I.; Zanzucchi, P. J.; Magee, C. W.; Lucovsky, G.
PUB. DATE
February 1985
SOURCE
Applied Physics Letters;2/15/1985, Vol. 46 Issue 4, p421
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Several models of boron neutralized by atomic hydrogen in silicon were tested by secondary ion mass spectrometry and infrared spectrometry. The hydrogen concentration is comparable to that of boron. Boron neutralization appears as a drop in free-carrier absorption and as an increase in resistivity. A new infrared vibrational mode attributed to 〈111〉 vibrations of H tied to Si appears at 1875 cm[sup -1].
ACCESSION #
9817131

 

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