TITLE

GaAs lateral epitaxial growth over a tungsten grating by molecular beam epitaxy

AUTHOR(S)
Kondo, Naoto; Kawashima, Minoru; Ando, Seigo; Oe, Kunishige
PUB. DATE
February 1985
SOURCE
Applied Physics Letters;2/15/1985, Vol. 46 Issue 4, p436
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
GaAs lateral epitaxial growth over a tungsten grating is achieved by molecular beam epitaxy. Lateral overgrowth is seeded by epitaxial deposits formed on the GaAs (001) surface openings onto a line and space tungsten grating. The condition of obtaining continuous growth surface is investigated. While a rather slow growth rate (0.5 µm/h) results in faceted growth, a growth rate of 1 µm/h at a growth temperature of 730 °C on a 2.5-µm period tungsten grating of 〈110〉 direction permits one to obtain a smooth continuous overgrown layer. The x-ray diffraction pattern on this layer exhibits a single crystalline GaAs (400) pattern and an interface between the buried tungsten and the overgrown layer shows a preferable Schottky characteristic.
ACCESSION #
9817127

 

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