Photoacoustic calorimetry of photovoltaic cells: Use of phase shifts to indicate thermal loss mechanisms

Cahen, David; Halle, Scott D.
February 1985
Applied Physics Letters;2/15/1985, Vol. 46 Issue 4, p446
Academic Journal
Preliminary results are presented of the photoacoustic phase angle dependence, for a Si solar cell, on load resistance, illumination intensity, and photon energy. The data are interpreted using a simple, phenomenological model that assigns the thermal loss mechanisms occurring in the photovoltaic device to the diffused (top) layer, the junction region, and the base of the cell.


Related Articles

  • Quantitative separation of mechanisms for power dissipation in solar cells by photoacoustic and photovoltaic measurements. Flaisher, Harvey; Wolf, Martin; Cahen, David // Journal of Applied Physics;8/15/1989, Vol. 66 Issue 4, p1832 

    Focuses on a studythat used photoacoustics as a calorimetric method in conjunction with electrical measurements to determine which mechanisms are involved in the conversion of most of the absorbed radiation to thermal energy in solar cells. Application of a model for internal energy fluxes in a...

  • Dependence of thermal conductivity of porous silicon on porosity characterized by photoacoustic technique. Shen, Qing; Toyoda, Taro // Review of Scientific Instruments;Jan2003, Vol. 74 Issue 1, p601 

    We have applied a photoacoustic (PA) technique to study the thermal properties of porous silicon (PS) films formed on p-type Si substrates by electrochemical anodic etching with greatly different porosities (20%-60%). From the dependence of the PA signals on the modulation frequency of...

  • Energy spectra and dynamics of surface states on silicon investigated by the photoacoustic method. Todorovic, D. M.; Smiljanic, M. // Review of Scientific Instruments;Jan2003, Vol. 74 Issue 1, p747 

    The spectral and dynamic characteristics of surface energy states (SES) on a Si wafer are investigated by photoacoustic (PA) spectroscopy. The PA spectra were measured as a function of the wavelength and modulation frequency of the excitation optical beam by the PA spectrometer. The PA amplitude...

  • Exposure time dependence of the photoacoustic and photoluminescence intensities of porous silicon with different wavelengths of excitation light. Toyoda, Taro; Yamazaki, Takahiro; Shen, Qing // Review of Scientific Instruments;Jan2003, Vol. 74 Issue 1, p869 

    We report the exposure time dependence of the photoacoustic (PA) intensities of porous silicon (PS) with different excitation wavelengths together with that of the photoluminescence (PL). Although the PA intensity decreases somewhat slowly with exposure time, the PL intensity undergoes...

  • Infrared absorption of epitaxial NiSi2 layers on Si(111). Flohr, Th.; Schulz, M.; Tung, R. T. // Applied Physics Letters;10/26/1987, Vol. 51 Issue 17, p1343 

    Infrared absorption of epitaxial type A and type B NiSi2 layers on Si(111) has been measured with photoacoustic spectroscopy. Type A silicides showed identical absorption as type B layers with corresponding thicknesses. The observed dependence of absorption on silicide thickness agrees with...

  • Photoacoustic frequency heat-transmission technique: Thermal and carrier transport parameters measurements in silicon. Todorovic, D. M.; Nikolic, P. M.; Dramicanin, M. D.; Vasiljevic, D. G.; Ristovski, Z. D. // Journal of Applied Physics;11/1/1995, Vol. 78 Issue 9, p5750 

    Presents a study that used photoacoustic frequency heat-transmission technique to examine thermal and carrier transport properties in low-doped silicon wafers. Description of the theoretical model; Experimental results; Discussion.

  • Effect of electronic strain on photoacoustic generation in silicon. Stearns, R. G.; Kino, G. S. // Applied Physics Letters;11/15/1985, Vol. 47 Issue 10, p1048 

    The photogeneration of excess free carriers gives rise to a mechanical strain in semiconductors. An experiment has been performed to investigate the contribution of this electronic strain to photoacoustic generation, and it is found that electronic strain is an important mechanism in the...

  • General analytical solution for photoacoustic effect with multilayers. Hu, Hanping; Zhang, Wei; Xu, Jun; Dong, Yi // Applied Physics Letters;1/7/2008, Vol. 92 Issue 1, p014103 

    A general solution of the photoacoustic (PA) effect with multilayers is derived by using a fully thermally-mechanically coupled PA model. This expression takes thermal, mechanical, optical, and geometry properties of multilayers, as well as the thermal contact resistances between layers into...

  • Laser-induced focused ultrasound for nondestructive testing and evaluation. Kozhushko, Victor V.; Hess, Peter // Journal of Applied Physics;Jun2008, Vol. 103 Issue 12, p124902 

    Focused ultrasound pulses generated by photoacoustic transformation at a metal surface immersed in water possess a pronounced compression phase on the nanosecond time scale. For 8 ns laser pump pulses, the spectrum of the initially generated ultrasonic pulse covered a frequency range between 0.1...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics