Determination of the conduction-band discontinuities of GaAs/AlxGa1-xAs interfaces by capacitance-voltage measurements

Okumura, H.; Misawa, S.; Yoshida, S.; Gonda, S.
February 1985
Applied Physics Letters;2/15/1985, Vol. 46 Issue 4, p377
Academic Journal
The relation between the conduction-band discontinuity ΔE[sub c] and the A1 composition x of refined GaAs/As[sub x] Ga[sub 1-x] As(x < 0.42) heterointerfaces was determined by means of capacitance-voltage measurements. The resulting relation, ΔE[sub c] = 0.67ΔE[sub g], is different from Dingle's rule. The interface charge density σ of a series of the samples was also investigated in relation to the reliability of the determination of ΔE[sub c]. It was found that σ less than 1 × 10[sup 11]/cm² is required to determine ΔE[sub c] with the precision of ± 10 meV.


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