TITLE

Metalorganic growth of CdTe and HgCdTe epitaxial films at a reduced substrate temperature using diisopropyltelluride

AUTHOR(S)
Hoke, W. E.; Lemonias, P. J.
PUB. DATE
February 1985
SOURCE
Applied Physics Letters;2/15/1985, Vol. 46 Issue 4, p398
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Epitaxial films of CdTe and FlgCdTe have been grown using a new metalorganic compound, diisopropyltelluride. Diisopropyltelluride is found to be less stable than the conventionally used diethyltelluride and consequently makes possible HgCdTe growth at a lower substrate temperature. Specular CdTe and HgCdTe epitaxial films have been obtained with moderate growth rates at substrate temperatures as low as 350 °C. Preliminary infrared and Hall measurements are encouraging for the application of this compound for HgCdTe growth. The reduced stability of diisopropyltelluride compared to diethyltelluride is consistent with a stability model for branched hydrocarbon molecules.
ACCESSION #
9817115

 

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