Molecular beam epitaxial growth and transport properties of modulation-doped AlGaAs-GaAs heterostructures

Weimann, G.; Schlapp, W.
February 1985
Applied Physics Letters;2/15/1985, Vol. 46 Issue 4, p411
Academic Journal
Mobilities and sheet carrier densities of single interface, modulation-doped AlGaAs-GaAs heterostructures depend on the structure and molecular beam epitaxial growth parameters. Variation of the thickness of the undoped spacer between 20 and 360 Å gave electron densities in the range 10[sup 12]-2 × 10[sup 11] cm[sup -2] in two-dimensional electron gases. Thick spacers resulted in high 4.2-K mobilities of 1.2 × 10[sup 6] cm²/Vs in dark and 1.8 × 10[sup 6] cm²/Vs under illumination with corresponding channel densities of 2.3 × 10[sup 11] cm[sup -2] and 3.9 × 10[sup 11] cm[sup -2], respectively. Twodimensional hole gases had mobilities of 83 000 cm²/Vs and hole concentrations of 2.7 × 10[sup 11] cm[sup -2] at 4.2 K.


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