High output power characteristics in broad-channeled substrate inner stripe lasers

Yamamoto, S.; Miyauchi, N.; Maei, S.; Morimoto, T.; Yamamoto, O.; Yano, S.; Hijikata, T.
February 1985
Applied Physics Letters;2/15/1985, Vol. 46 Issue 4, p319
Academic Journal
A high output power AlGaAs laser is newly developed in the spectral range of 770-780 nm. The laser has a double-depth channel on the p-GaAs substrate which forms a built-in optical waveguide having a double effective refractive index/loss step. This novel waveguide is effective to make the fundamental lateral mode extremely stable; that is, up to 60 mW when the reflectivity of the front facet (R[sub f]) is 0.12, and 100 mW when R[sub f] is 0.04. cw threshold currents are 35-45 mA and external differential efficiencies are 0.6-0.8 mW/mA. Also, an astigmatic distance below 3 µm is obtained when R[sub f] is more than 0.10.


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