TITLE

Doping effects in reactive plasma etching of heavily doped silicon

AUTHOR(S)
Lee, Young H.; Chen, Mao-Min; Bright, A. A.
PUB. DATE
February 1985
SOURCE
Applied Physics Letters;2/1/1985, Vol. 46 Issue 3, p260
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Etch rates of heavily doped silicon films (n and p type) and undoped polycrystalline silicon film were studied during plasma etching and also during reaction ion etching in a CF[sub 4]/O[sub 2] plasma. The etch rate of undoped Si was lower than the n[sup +]-Si etch rate, but higher than the p[sup +]-Si etch rate, when the rf inductive heating by the eddy current was minimized by using thermal backing to the water-cooled electrode. This doping effect may be explained by the opposite polarity of the space charge present in the depletion layer of n[sup +]-Si and p[sup +]-Si during reactive plasma etching.
ACCESSION #
9817095

 

Related Articles

  • Visible luminescence from a-SiN films doped with Er and Sm. Zanatta, A. R.; Ribeiro, C. T. M.; Jahn, U. // Applied Physics Letters;7/23/2001, Vol. 79 Issue 4 

    Relatively strong and narrow red and green light emission has been achieved from amorphous (a-) SiN films independently doped with Er[sup 3+] and Sm[sup 3+] ions. The films were deposited by cosputtering a Si target partially covered with small pieces of metallic Er (and Sm) in an atmosphere of...

  • Threshold voltage shift of amorphous silicon thin-film transistors by step doping. Matsumoto, T.; Mishima, Y.; Yanai, K.; Oki, K. // Applied Physics Letters;2/13/1989, Vol. 54 Issue 7, p606 

    The threshold voltage (VT) shift of hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) by boron doping has been investigated. In TFTs with a uniformly doped structure (SiN/B-doped a-Si:H), VT shifts to a positive voltage by boron doping, while the field-effect mobility decreases...

  • Study of C49-TiSi2 and C54-TiSi2 formation on doped polycrystalline silicon using in situ resistance measurements during annealing. Clevenger, L. A.; Mann, R. W.; Roy, R. A.; Saenger, K. L.; Cabral, C.; Piccirillo, J. // Journal of Applied Physics;12/15/1994, Vol. 76 Issue 12, p7874 

    Presents information on a study which measured in situ resistance versus temperature or time for reactions of titanium and undoped or doped polycrystalline silicon. Sample preparation; Measurement of the resistance of the titanium/polycrystalline silicon thin film; Annealing temperature required.

  • Observation of whispering-gallery modes in Si microdisks at room temperature. Xia, J. S.; Ikegami, Y.; Nemoto, K.; Shiraki, Y. // Applied Physics Letters;4/2/2007, Vol. 90 Issue 14, p141102 

    Whispering-gallery modes are observed at room temperature in silicon microdisk resonators fabricated on silicon-on-insulator substrates. Sharp luminescent peaks originating from the crystalline silicon film, corresponding to the whispering-gallery modes, are observed to change in microdisks with...

  • Photoelectrochemical Characterization of Sprayed α-Fe2O3 Thin Films: Influence of Si Doping and SnO2 Interfacial Layer. Yongqi Liang; Enache, Cristina S.; van de Krol, Roel // International Journal of Photoenergy;Jan2009 Supplement, p1 

    α-Fe2O3 thin film photoanodes for solar water splitting were prepared by spray pyrolysis of Fe(AcAc)3. The donor density in the Fe2O3 films could be tuned between 1017-1020 cm-3 by doping with silicon. By depositing a 5nm SnO2 interfacial layer between the Fe2O3 films and the transparent...

  • A microstructural study of porous silicon. Berbezier, I.; Halimaoui, A. // Journal of Applied Physics;11/1/1993, Vol. 74 Issue 9, p5421 

    Presents a study which investigated porous silicon (PS) films obtained from lightly and heavily doped p-type silicon. Amorphization of the PS; Phases of transmission electron diffraction; Details on PS from heavily doped (p[sup+] substrates.

  • Direct measurement of free-energy barrier to nucleation of crystallites in amorphous silicon thin films. Shi, Frank G. // Journal of Applied Physics;11/1/1994, Vol. 76 Issue 9, p5149 

    Proposes a method to obtain the free-energy barrier to nucleation of crystallites in amorphous silicon (α-Si) thin films prepared by various techniques and crystallized under different conditions at varying temperatures. Comparison between the free-energy barrier to nucleation of...

  • Improvement of thermal stability and composition changes of atomic layer deposited HfO2 on Si by in situ O3 pretreatment. Park, Tae Joo; Kim, Jeong Hwan; Seo, Min Ha; Jang, Jae Hyuck; Hwang, Cheol Seong // Applied Physics Letters;4/9/2007, Vol. 90 Issue 15, p152906 

    The influence of thick (1.4 nm) and thin (0.6 nm) SiO2 interfacial layers grown by an O3 predeposition treatment during atomic layer deposition of high-k HfO2 films on the thermal stability and chemical structure of the film was investigated. It was found that the HfO2/thick SiO2 stack...

  • Production of thin film silicon-doped hydroxyapatite via sputter deposition. Porter, A. E.; Rea, S. M.; Galtrey, M.; Best, S. M.; Barber, Z. H. // Journal of Materials Science;Mar2004, Vol. 39 Issue 5, p1895 

    Discusses the production of thin film silicon-doped hydroxyapatite via sputter deposition. Relative positions of titanium substrates during silicon-doped hydroxyapatite sputter deposition and resulting film composition; Effect of heat-treatment time on texture and crystallinity of thin film...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics