Enhancement of lateral solid phase epitaxial growth in evaporated amorphous Si films by phosphorus implantation

Yamamoto, Hiroshi; Ishiwara, Hiroshi; Furukawa, Seijiro
February 1985
Applied Physics Letters;2/1/1985, Vol. 46 Issue 3, p268
Academic Journal
Characteristics of lateral solid phase epitaxial (L-SPE) growth and random crystallization in amorphous Si films, which were deposited on (100) Si substrates with SiO[sub 2] patterns at elevated substrate temperature and amorphized by subsequent Si[sup +] or P[sup +] ion implantation, were investigated. It was found from Nomarski optical microscopy that phosphorus doping is effective to enhance the L-SPE growth rate and to reduce the random nucleation rate. Owing to these two effects, the maximum L-SPE length of about 24 µm was obtained in the film doped with 3 × 10[sup 20] P atoms/cm³ after 8-h annealing at 600°C, which was about six times longer than that in the undoped films.


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