TITLE

Wide band-gap, fairly conductive p-type hydrogenated amorphous silicon carbide films prepared by direct photolysis; solar cell application

AUTHOR(S)
Yamada, Akira; Kenne, Jean; Konagai, Makoto; Takahashi, Kiyoshi
PUB. DATE
February 1985
SOURCE
Applied Physics Letters;2/1/1985, Vol. 46 Issue 3, p272
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Wide optical band-gap (2.0-2.3 eV) undoped and boron-doped hydrogenated amorphous silicon carbide (a-SiC:H) films have been prepared by both direct photo and rf glow discharge (GD plasma) decomposition of pure methylsilanes or acetylene and disilane gas mixtures. The photochemically prepared p-type films showed higher dark conductivities and lower activation energies. For an optical band gap of 2.0 eV a high conductivity of 7.0 × 10[sup -5] (S cm[sup -1]) and a low activation energy of 0.33 eV have been measured. The first trial of these wide band-gap, fairly conductive films as a window layer in a p-i-n solar cell showed the high conversion efficiency of 9.46% under AM1 insolation.
ACCESSION #
9817091

 

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