Gamma ray detectors with HgCdTe contact layers

Ryan, F. J.; Shin, S. H.; Edwall, D. D.; Pasko, J. G.; Khoshnevisan, M.; Westmark, C. I.; Fuller, C.
February 1985
Applied Physics Letters;2/1/1985, Vol. 46 Issue 3, p274
Academic Journal
A new device structure for room-temperature gamma ray spectrometry has been developed and demonstrated. The device is a heterojunction p-i-n, HgCdTe/CdTe/HgCdTe structure. The p layer is Au doped with N[sub A] = 1.9 × 10[sup 16] cm[sup -3], μ[sub P], = 35 cm²/Vs, and a Cd composition χ[sub Cd] = 0.6. The n Iayer is In doped with N[sub D] = 2 × 10[sup 17] cm[sup -3], μ[sub n] = 1.880 cm²/Vs, and x[sub Cd] = 0.31. Ohmic contacts were achieved using electron beam evaporated Au (p layer contact) and In (n-layer contact). Devices (with approximately 2-mm² area, 2-mm thickness) exhibited reverse leakage currents of 50 pA-4 nA, good photovoltaic response with visible light, and voltage breakdowns in excess of 1000 V. At 250-V reverse bias, the energy resolutions at the principal photopeaks of Am241 (60 keV) and Co-57 (122 keV) were 12.5% and 8.4%, respectively.


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