Deep Fe and intrinsic defect levels in Ga0.47In0.53As/InP

Goetz, K.-H.; Bimberg, D.; Brauchle, K.-A.; Jürgensen, H.; Selders, J.; Razeghi, M.; Kuphal, E.
February 1985
Applied Physics Letters;2/1/1985, Vol. 46 Issue 3, p277
Academic Journal
Two deep traps in Ga[sub 0.47]In[sub 0.53]As/InP:Fe at a depth of 110 meV and 150 meV, respectively, are observed for the first time using low-temperature photoluminescence and deep level transient spectroscopy. The dependence of luminescence intensity on the growth process itself (liquid phase epitaxy, vapor phase epitaxy, and metalorganic chemical vapor deposition) and its parameters (growth temperature, layer thickness) and the substrate doping is reported and leads to the unambiguous identification of the 150-meV acceptorlike trap as being caused by Fe impurities. Fe diffuses from the substrate to the epitaxial layer during the growth process. This outdiffusion is less pronounced for layers grown at lower temperature. The level at 110 meV which is also observed in layers grown on InP:S substrate is tentatively assigned to an intrinsic defect of Ga[sub 0.47]In[sub 0.53]As.


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