Room-temperature photoluminescence times in a GaAs/AlxGa1-xAs molecular beam epitaxy multiple quantum well structure

Fouquet, J. E.; Siegman, A. E.
February 1985
Applied Physics Letters;2/1/1985, Vol. 46 Issue 3, p280
Academic Journal
Time-resolved photoluminescence measurements at room temperature of the n = 1 heavy hole transition in a GaAs/Al[sub x]Ga[sub 1-x] As multiple quantum well structure reveal a single-exponential decay with τ ≈ 1 ns over a wide range of excitation densities. Time-integrated photoluminescence increases as the square of excitation energy density. These data indicate that the observed decay rate is due to nonradiative recombination. Free carriers, not excitons, govern radiative recombination in this sample.


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