Minority-carrier lifetime study of the pressure induced Γ-X crossover in GaAs

Leroux, M.; Pelous, G.; Raymond, F.; Verie, C.
February 1985
Applied Physics Letters;2/1/1985, Vol. 46 Issue 3, p288
Academic Journal
Room-temperature continuous and time-resolved (on a nanosecond scale) photoluminescence experiments have been performed on p-type GaAs. Observation of indirect luminescence in GaAs above 4 GPa allowed a direct determination of the room-temperature pressure coefficient of the X[sup c, sub 1] valleys. A new set of pressure dependence parameters for both F and X energy gaps in GaAs has been determined. These pressure coefficients, together with the intensity of luminescence as a function of pressure, yielded an estimate of the electron lifetime ratio confirmed by subsequent time-resolved experiments. A threefold enhancement of electron lifetime is observed above the Γ- X crossover.


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