TITLE

Electron heating and free-carrier absorption in GaAs/AlGaAs single heterostructures

AUTHOR(S)
Höpfel, R. A.; Weimann, G.
PUB. DATE
February 1985
SOURCE
Applied Physics Letters;2/1/1985, Vol. 46 Issue 3, p291
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We observe far infrared broadband emission from the hot two-dimensional electron plasma in GaAs/AlGaAs single heterostructures grown by molecular beam epitaxy. The radiation is analyzed in two different frequency regimes (around 35 and 100 cm[sup -1). From the relative dependence of the intensities on the applied longitudinal electric field the hot-electron temperatures are determined. From the absolute emission intensities values of the free-carrier absorption coefficient (down to 10[sup -5] in ultrahigh mobility samples) are measured.
ACCESSION #
9817084

 

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