TITLE

Defect reduction in GaAs epitaxial layers using a GaAsP-InGaAs strained-layer superlattice

AUTHOR(S)
Tischler, M. A.; Katsuyama, T.; El-Masry, N. A.; Bedair, S. M.
PUB. DATE
February 1985
SOURCE
Applied Physics Letters;2/1/1985, Vol. 46 Issue 3, p294
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
GaAsP-InGaAs strained-layer superlattices grown lattice matched to GaAs have been used to reduce the density of threading dislocations originating from the GaAs substrate. GaAs epitaxial layers grown on the GaAsP-InGaAs superlattice buffer layers showed a dislocation density lower by at least an order of magnitude than that obtained from epitaxial layers grown directly on GaAs substrates. Transmission electron microscopy showed that dislocations originating from the GaAs substrate do not penetrate the GaAsP-InGaAs superlattice layers.
ACCESSION #
9817082

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics