Investigation of short time donor annihilation in silicon

O’Mara, W. C.; Parker, J. E.; Butler, Paul; Gat, Arnon
February 1985
Applied Physics Letters;2/1/1985, Vol. 46 Issue 3, p299
Academic Journal
We have investigated the annealing of the oxygen donor in silicon in the temperature range 550700°C using Heatpulse lamp annealing in the time range of 1-1200 s. As-grown silicon wafers can contain donors due to cooling through 450°C as a part of the crystal growth process. A 1-s anneal at 650°C is sufficient to eliminate these donors completely. Intentionally created donors were annealed in order to determine reaction kinetics. A second-order process involving the donor plus another species fits the data, with an Arrhenius behavior as a function of temperature. The activation energy for this process is 1.7 eV.


Related Articles

  • Thermal donor formation and annihilation in oxygen-implanted float-zone silicon. Hahn, S.; Stein, H. J.; Shatas, S. C.; Ponce, F. A. // Journal of Applied Physics;9/1/1992, Vol. 72 Issue 5, p1758 

    Focuses on a study that investigated the thermal donor formation and annihilation in oxygen-implanted float-zone silicon. Annihilation characteristics of thermal donors formed in the oxygen implanted layers; Basis for the tentative conclusion that both old and new thermal donors exist in the...

  • Generation and annihilation of boron-oxygen-related recombination centers in compensated p- and n-type silicon. Lim, Bianca; Rougieux, Fiacre; Macdonald, Daniel; Bothe, Karsten; Schmidt, Jan // Journal of Applied Physics;Nov2010, Vol. 108 Issue 10, p103722 

    The impact of boron-oxygen-related recombination centers as well as their defect kinetics have been intensely studied in boron-doped oxygen-rich p-type crystalline silicon. Experimental data for the defect in simultaneously boron- and phosphorus-doped compensated p- and n-type silicon, however,...

  • Annihilation of thermal double donors in silicon. Kamiura, Yoichi; Takeuchi, Yoshinori // Journal of Applied Physics;2/15/2000, Vol. 87 Issue 4, p1681 

    Presents a study which investigated the annihilation of thermal double donors (TDD) in silicon. Factor affecting the formation of ultrashallow junctions in semiconductors; Methodology used in the study; Two regimes of TDD annihilation.

  • Interstitial and vacancy concentrations in the presence of interstitial injection. Hu, S. M. // Journal of Applied Physics;2/15/1985, Vol. 57 Issue 4, p1069 

    Talks about interstitial and vacancy concentrations in the presence of interstitial injection and its effect on diffusion processes. Discussion on the phenomenon of oxidation-enhanced diffusion and its importance in the understanding of the diffusion mechanisms of various group III and V...

  • A study of vacancy-type defects introduced by the carburization of Si by monoenergetic positron beams. Uedono, Akira; Muramatsu, Makoto; Ubukata, Tomohiro; Watanabe, Masahito; Ichihashi, Toshinari; Suzuki, Ryoichi; Ohdaira, Toshiyuki; Mikado, Tomohisa; Takasu, Seiichi // Journal of Applied Physics;4/1/2001, Vol. 89 Issue 7 

    Vacancy-type defects introduced by the carburization of Si were studied by means of monoenergetic positron beams. Doppler broadening spectra of the annihilation radiation were measured for Si substrates with carbon films at temperatures between 298 and 1473 K. The line-shape parameter S, which...

  • Alternative method for reconstruction of antihydrogen annihilation vertices. Amole, C.; Ashkezari, M.; Andresen, G.; Baquero-Ruiz, M.; Bertsche, W.; Bowe, P.; Butler, E.; Cesar, C.; Chapman, S.; Charlton, M.; Deller, A.; Eriksson, S.; Fajans, J.; Friesen, T.; Fujiwara, M.; Gill, D.; Gutierrez, A.; Hangst, J.; Hardy, W.; Hayano, R. // Hyperfine Interactions;Dec2012, Vol. 212 Issue 1-3, p101 

    The ALPHA experiment, located at CERN, aims to compare the properties of antihydrogen atoms with those of hydrogen atoms. The neutral antihydrogen atoms are trapped using an octupole magnetic trap. The trap region is surrounded by a three layered silicon detector used to reconstruct the...

  • Antihydrogen detection in ALPHA. Hydomako, Richard; Andresen, Gorm; Ashkezari, Mohammad; Baquero-Ruiz, Marcelo; Bertsche, William; Butler, Eoin; Bowe, Paul; Cesar, Claudo; Chapman, Steve; Charlton, Michael; Fajans, Joel; Friesen, Tim; Fujiwara, Makoto; Gill, David; Hangst, Jeffrey; Hardy, Walter; Hayano, Ryugo; Hayden, Michael; Humphries, Andrew; Jonsell, Svante // Hyperfine Interactions;Dec2012, Vol. 212 Issue 1-3, p91 

    The ALPHA project is an international collaboration, based at CERN, with the experimental goal of performing precision spectroscopic measurements on antihydrogen. As part of this endeavor, the ALPHA experiment includes a silicon tracking detector. This detector consists of a three-layer array of...

  • Light-Induced-Degradation effects in boron–phosphorus compensated n-type Czochralski silicon. Schutz-Kuchly, T.; Veirman, J.; Dubois, S.; Heslinga, D. R. // Applied Physics Letters;3/1/2010, Vol. 96 Issue 9, p093505 

    This letter focuses on the evolution under illumination of the carrier lifetime in n-type boron–phosphorus compensated Czochralski silicon. Our results show a Light-Induced-Degradation (LID) of the carrier lifetime which we prove to be related to additional boron. The activation energy of...

  • Investigation of antiphase domain annihilation mechanism in 3C–SiC on Si substrates. Ishida, Y.; Takahashi, T.; Okumura, H.; Yoshida, S. // Journal of Applied Physics;10/1/2003, Vol. 94 Issue 7, p4676 

    We have proposed a model in order to explain antiphase domains (APDs) annihilation in 3C–SiC on Si (001) substrates. The models proposed so far have been classified by the planes in which antiphase boundaries (APBs) propagate. We examined these conventional models from the viewpoint of...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics