TITLE

Investigation of short time donor annihilation in silicon

AUTHOR(S)
O’Mara, W. C.; Parker, J. E.; Butler, Paul; Gat, Arnon
PUB. DATE
February 1985
SOURCE
Applied Physics Letters;2/1/1985, Vol. 46 Issue 3, p299
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have investigated the annealing of the oxygen donor in silicon in the temperature range 550700°C using Heatpulse lamp annealing in the time range of 1-1200 s. As-grown silicon wafers can contain donors due to cooling through 450°C as a part of the crystal growth process. A 1-s anneal at 650°C is sufficient to eliminate these donors completely. Intentionally created donors were annealed in order to determine reaction kinetics. A second-order process involving the donor plus another species fits the data, with an Arrhenius behavior as a function of temperature. The activation energy for this process is 1.7 eV.
ACCESSION #
9817081

 

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