Molecular beam epitaxial growth of In1-xGaxAs1-ySby lattice matched to GaSb

Tsang, W. T.; Chiu, T. H.; Kisker, D. W.; Ditzenberger, J. A.
February 1985
Applied Physics Letters;2/1/1985, Vol. 46 Issue 3, p283
Academic Journal
We have succeeded in growing epitaxial layers and multilayer heterostructures of In[sub 1-x]Ga[sub x]As[sub 1-y]Sb[sub y] quaternary and InAs[sub 0.92]Sb[sub 0.08] ternary alloys lattice matched to GaSh by molecular beam epitaxy. High quality epilayers with lattice mismatch Δa/a ∼ 8 × 10[sup -4], excellent morphology, and efficient photoluminescence were grown. The surface reconstructions during growth of these quaternary and ternary alloys were also investigated using in situ reflection highenergy electron diffraction.


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