Reduction of fall times in Ga0.47In0.53As photoconductive receivers through back gating

Chen, C. Y.; Cho, A. Y.; Olsson, N. A.; Garbinski, P. A.
February 1985
Applied Physics Letters;2/1/1985, Vol. 46 Issue 3, p296
Academic Journal
We have observed the reduction of fait times in Ga[sub 0.47]In[sub 0.53] As photoconductive receivers by applying a reverse back gate voltage. A reduction of fall times from 7 to ≈ 1 ns was obtained with a back gate voltage as low as 1.1 V. The increase in response speeds reduced the bit error rates at 420 Mb/s from 3 × 10[sup -6] to 10[sup -8] at 1.55 µm, and should improve the receiver sensitivity by ≈ 1 dB. More importantly, the increase in bandwidths may allow the detector to operate without equalizers for certain bit rates. This is the first demonstration of a back gated photoconductive receiver operating in the 1.1-1.65-µm range.


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