TITLE

High external efficiency (36%) 5-μm mesa isolated GaAs quantum well laser by organometallic vapor phase epitaxy

AUTHOR(S)
Welch, D. F.; Schaus, C. F.; Shealy, J. R.
PUB. DATE
January 1985
SOURCE
Applied Physics Letters;1/15/1985, Vol. 46 Issue 2, p121
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
High external power efficiencies of 36% are obtained from 5-μm mesa isolated graded-index separate-confinement heterostructure single quantum well lasers grown by organometallic vapor phase epitaxy. Threshold currents of 21 mA are reported for a 5×96 μm cavity laser with differential quantum efficiencies of as high as 80% at 6 mW/facet. In addition, high facet power densities of 13 mW/μm are reported giving single ended output powers of 65 mW from 5-μm uncoated facets. Even higher power densities of 20 mW/μm are observed for 1-μm mesa stripe lasers before probe damage occurred.
ACCESSION #
9817062

 

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