Gain measurements in InGaAsP multiquantum well lasers

Dutta, N. K.; Craft, D. C.; Napholtz, S. G.
January 1985
Applied Physics Letters;1/15/1985, Vol. 46 Issue 2, p123
Academic Journal
This letter reports the polarization dependence and temperature dependence of gain spectrum in InGaAsP multiquantum well (MQW) lasers emitting at 13 μm. The gain of the TE mode is larger (by ∼40 cm-1) than that of the TM mode. The peak gain for the TM mode is shifted towards shorter wavelengths from that of the TE mode. This is because both light hole and heavy hole transitions contribute to TE emission whereas the TM emission is principally due to light hole transitions. The large gain difference between the TE and TM mode suggests that the occurrence of stress induced effects (e.g., light-current kinks) may be reduced in MQW active layer lasers. The net gain G is found to vary linearly with the injection current I. The slope dG/dI of the gain-current curve for these MQW lasers decreases with increasing temperature. However, the decrease is considerably smaller than that for conventional InGaAsP double heterostructure lasers. The smaller decrease is consistent with the observed lower temperature dependence of threshold (high T0) of the MQW lasers.


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