TITLE

Very low threshold buried ridge structure lasers emitting at 1.3 μm grown by low pressure metalorganic chemical vapor deposition

AUTHOR(S)
Razeghi, M.; Blondeau, R.; Kazmierski, K.; Krakowski, M.; Duchemin, J. P.
PUB. DATE
January 1985
SOURCE
Applied Physics Letters;1/15/1985, Vol. 46 Issue 2, p131
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
GaInAsP-InP buried ridge structure lasers emitting at 1.3 μm have been fabricated on material grown completely by low pressure metalorganic chemical vapor deposition. These lasers have low threshold (11 mA), exhibit linear (kink-free) light-current characteristics up to high powers (10 mW/facets), and can be operated at high temperatures (70 °C). Excellent uniformity over 10 cm2 has been obtained, and an external quantum efficiency of 60% for two faces has been measured.
ACCESSION #
9817059

 

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