Space-charge-like scattering in epitaxial GaAs from low temperature and high pressure Hall measurements

Saxena, A. K.; Sinha, A. K.; Adams, A. R.
January 1985
Applied Physics Letters;1/15/1985, Vol. 46 Issue 2, p159
Academic Journal
The Hall electron mobility in GaAs grown by vapor phase epitaxy (VPE), liquid phase epitaxy (LPE), molecular beam epitaxy (MBE), and metalorganic chemical vapor deposition (MOCVD) has been studied both as a function of temperature (77


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